Extended Source Tunnel Field-Effect Transistor with Source Pocket Integration

In this manuscript, a detailed analysis is done on extended source Tunnel FET (ES-TFET) in which source and channel are sandwiched up to certain extent resulting in activation of both the point and vertical tunneling. ESTFET offers a higher switching ratio of $\sim 10^{10}$ along with SSAVG of 30mV/Dec. In this device, L-shaped Source/channel (S/C) interface is formed in such a way that both vertical and lateral electric field due to gate helps to improve the tunneling probability of charge carriers through S/C interface. Further, a pocket is placed at S/C interface under the channel which results in enhancement of the ON-state current along with other dc parameters. It is clearly found that the proposed device offers ON-state current in the order of $\sim 5$ and OFF-state in the order of $\sim{18}$.