Dielectric-Pocket based Multi-channel Nanowire Field Effect Transistor for High-speed Operations

The brain of electronic devices are MOSFETs, such as Silicon-Dielectric pocket packed-Gate All Around/Nanowire (Si-DPP-GAA). Because of their unique biomedical and electrical characteristics, FETs are an essential component for the future generation of electronic systems. The article illustrates the characteristics of Si-GAA-DPP-multi-channel cylindrical MOSFET designed in nether scientific nodes. The proposed structure can be regarded as one of the leading models in the Nanowire-MOSFET lineage thanks to improvements in gate leakage current ($\mathrm{I}_{\mathrm{o}\mathrm{f}\mathrm{f}}$), Subthreshold-Swing (SS), and DrainInduced-Barrier-Lowering (DIBL). The study encompasses the effect of variation in channel length from 10nm to 25nm on the SS and DIBL. The improved OFF-state current with higher electrostatic integrity is paving its way towards future evolution of high speed and low power memories based on CMOS technology.