Attainment of nearly thermally limited subthreshold slope in GaAs MOSFETs with in-situ Y2O3gate dielectric for cryogenic electronics

We have achieved subthreshold slope (SS) values close to the thermal limited values in GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). The low interfacial trap density (D
it
) at the in-situ prepared Y
2
O
3
/GaAs(001) has attributed to these low SS values of 63 mV/dec at 300 K and 18 mV/dec at 77 K, respectively. The SS value of our GaAs MOSFETs at 77 K is comparable to those of the SiO
2
/Si MOSFETs at 77 K and InGaAs high-electron-mobility transistors (HEMTs) at 5K, suggesting the GaAs MOSFETs for cryogenic low-power application.