Optimizing activation process for strong direct bonding between diamond and Si substrates

We optimized process parameters to form strong bonding between diamond and Si substrates. Our previous study revealed that a diamond (100) substrate cleaned with a mixture of ammonia and hydrogen peroxide solutions can be bonded with a plasma-activated semiconductor substrate. In this study, when an oxygen plasma activation time was optimized, the shear strength of the bonded diamond and Si substrates satisfied a military standard for electronics. We believe that the semiconductor device strongly bonded on the diamond heat spreader can contribute to future high-power and high-frequency devices.