Optimization of the Dip Coating Parameters for Depositing Cesium Lead Halide Perovskite Quantum Dot Films on Gallium Arsenide Substrates

Solution concentration and several dip cycles are key factors that determine the thickness and quality of perovskite quantum dot (PQD) films. Dip coating is an effective technique used for depositing solution-processed PQDs in substrates which are common passivation layers in solar cells. The optimum dip-coating parameters for depositing cesium lead halide PQDs on GaAs substrates are investigated in this work. These parameters include withdrawal speed, solution concentration, and the number of dip cycles. Results were evaluated using atomic force microscopy (AFM), photoluminescence (PL), and absorbance measurements.