Avalanche Dynamics Model of SiC MOSFET Considering Thermal Runaway Phenomenon

A compact SPICE model is proposed in this article, which predicts the avalanche dynamics of the planar SiC
mosfet
in high accuracy. Different to the existing models, the proposed model takes the dynamic avalanche resistance into consideration, so the avalanche trajectory in safety state can be accurately simulated. In novelty, the proposed model describes the thermal runaway phenomenon inside the SiC
mosfet
, so the avalanche trajectory in failure state can also be correctly simulated. The proposed model is verified in the unclamped inductive switching test, the double pulse test, and the power factor correction converter respectively. The simulation results agree well with the experiment, and good convergence is verified in different SPICE softwares. The proposed model is totally based on the measurements, and no physical information is required. Therefore, the proposed SiC
mosfet
model would be favorable for the application engineers to observe the single-pulse avalanche dynamic out of the safe-operating-area.