Analysis and Power Comparison of SRAM, DRAM, and STT-MRAM for Advance technology

The tunability of Magnetic Tunnel Junction(MTJ) stack features based on the STT-MRAM may suit a wide range of product standards for microcontrollers and also the. Artificial intelligence inferencing devices, as well as SRAM-type applications such as frame buffer memory. However, each application faces unique hurdles in terms of reliability. STT-MRAM can be utilized to store code and data instead of external flash memory. STT-MRAM has a low cost and a small footprint. The SRAM cell is best when it comes to power consumption and also it uses less power than the traditional 6T SRAM cell. MRAM stands for magnetoresistive random-access memory, which stores the data as stable magnetic states of magnetoresistive devices and reads data by measuring the devices' resistance to determine their magnetic states and the write ability of 6T SRAM is increased approximately by 34 percent as compared to the standard 6T SRAM using transient analysis and simulation and lastly, the read, write, leakage power and latency are calculated