Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications

In this work, we have investigated the reliability degradation mechanisms in RF switches for 45nm RFSOI technology under DC and RF stress modes. We have used single-pole single-throw RF switches using thin and thick gate oxide in series stacked configurations using
$\boldsymbol{R_{ON}. C_{OFF}}$
as a key metric. Degradation and breakdown depend on stress time, DC gate and drain voltages, and RF power. The mechanism causing degradation is studied using the voltage swings at the terminals of the RF switch. In addition, stress recovery is also observed in some cases, which is critical for switches used in transceivers. Overall, the switch exhibits superior reliability under RF 5G mmWave operating conditions.