Inverted SOA and Transient Non-Linearity of LDMOS Devices With RESURF-Implant

Reduced surface field (RESURF) technique in the laterally double-diffused MOS (LDMOS) devices offers a promising solution of high voltage alternative over conventional LDMOS devices with improved figure of merits. This paper addresses the safe operating area (SOA) concerns and ON-state breakdown driven limitations of RESURF technique, highlighting the inverted SOA behavior. Using electrothermal simulations on TCAD tool, this work also investigates the influence of RESURF-implant on the lattice heating in the LDMOS devices.