Mathematical Modelling of β-(AlxGal-x)2O3/Ga2O3 Heterostructure

Out of various modeling approaches for high electron mobility transistors (HEMT), the physics-oriented models are the most advantageous ones considering accuracy, prediction beyond measured data and scalability, etc. In this regard, we have proposed a simplified compact DC model which captures current-voltage (I-V) and capacitance-voltage (C-V) characteristics of (AlxGa1-x)2O3/Ga2O3 HEMT, the most recent power HEMTs. We have also proposed an RF model that captures unity current gain cutoff frequency and power gain ranging from low frequencies up to MHz of range.