Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET

DC curves and S-parameters up to 30 GHz measured before and after hot-carrier-injection (HCI) stress in non-conducting (NC) mode are used to study the degradation suffered by the small-signal input and output impedances of a PD-SOI MOSFET. Modeling of the gate oxide
$\boldsymbol{(R_{ox})}$
and channel resistance
$(\boldsymbol{R_{ch}})$
due to NC-HCI is also performed and investigated in detail. Noticeable impact on the device's input resistance is seen for the first time up to frequencies of 500 MHz, but it is expected to increase further into the microwave frequency range as the gate leakage increases due to either device degradation or large applied gate voltage.