Analysis of AlGaN/GaN Interface Traps in the Enhancement-mode p-GaN HEMT

Interface trapping is a key factor in deteriorating the performance parameters of GaN high electron mobility transistors (HEMTs). This paper provides a comprehensive study related to AlGaN/GaN interface traps in p-GaN HEMT. The Silvaco ATLAS device simulation tool is used, for analyzing the interface traps, through static I-V and C-V characteristics. For our investigations, the acceptor traps with 0.5eV energy level, are placed at AlGaN/GaN interface in p-GaN HEMT. It is found that the interface traps cause threshold voltage instability and the current collapse in p-GaN HEMT. Finally, the response of interface traps introduces C-V dispersion, particularly in the depletion region of p-GaN HEMT.