Design-oriented model for short-channel MOS transistors based on inversion charge

This paper presents a design-oriented MOS transistor model that uses only 7 parameters for analytically describing the MOSFET behavior. Based on the inversion charge, it accounts for the most relevant short-channel effects in advanced technologies. The model provides analytical relations for the transconductances, output conductance, and nonlinearities of the transistor for simple analytical circuit design. The model is validated using the 28nm FD-SOI technology from STMicroelectronics and is compared to a state-of-the-art 4-parameter model to demonstrate the advantages of the proposed model for RF/analog design purposes.