38 GHz T/R Heterogeneous Integrated Module

In this paper, we present a T/R heterogeneous integrated module for 38GHz frequency range applications. In our design, a silicon based IPD structure combined with Si interposer is used as substrate. Inductors, capacitors, resistors, CPW lines as well as Al pads are integrated on high resistive silicon substrate, making it possible to realize system-on-chip integration of CMOS, MMIC and MEMS devices. GaAs MMIC components are integrated on to the Si interposer through Silicon Via and high density pad connections. No wire bonds are used in this process, making it suitable for high throughput and mass production applications. The heterogeneous integration through "hot via" scheme also minimizes parasitic effects in high frequency applications. Transmit and receive functions are demonstrated. The module size is 8mm×5.6mm×0.9mm, making it minimization the 38GHz frond-end channel.