Demonstration of $p-\text{type}$ GaN FinFETs on Silicon Substrates with Ultrahigh Current ON/OFF Ratio of 109 and Reduced Interface Trap Density

This work demonstrated a high output-current density
$(I_{\mathrm{D}})$
of 33 mA/mm and a record high drain current on/off ratio of
$1 \times 10^{9} p-\text{type}$
GaN Fin Field-Effect Transistor (FinFET) based on a
$p-\text{GaN/AlN/AlGaN-}$
on-Si structure. Besides, a subthreshold swing of 103 mV/dec was obtained owing to the wet pretreatment. Meanwhile, a high extrinsic transconductance of 3.4 mS/mm were acquired. The high
$I_{\mathrm{D}}$
and high drain current on/off ratio
$p-\text{type}$
GaN FinFET exhibits the potential to achieve matching with n-GaN transistors in all-GaN integrated circuits.