Heteroepitaxial InP growth on a Si(001) substrate using a Ge buffer layer in MOCVD

In this study, we grew InP heteroepitaxial layers on Si(001) substrates with Ge buffer layers. We found out that surface of InP layer was smoothened by adjusting Ge buffer layer. In addition, the suppression of planar defects in InP leaded to the improved crystallinity and optical properties, in spite of the increased threading dislocations. Our study suggested the possibility of combination of III-V and Ge for the future CMOS technologies.