Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

A surface-potential-based drain current model is presented for ambipolar organic thin-film transistors (OTFTs). First, following the multiple trapping and release (MTR) conduction mechanism, a drain current model is presented for unipolar OTFTs considering exponentially distributed trap state density in the energy gap of an organic semiconductor. Next, from the model for unipolar OTFTs, analyzing electrons or (and) holes in different regimes, the model for ambipolar OTFTs is presented. The presented model can describe the drain current by compact expressions and can estimate the trap states density. The model is verified by available experimental data considering temperature characteristics.