Improved Manufacturing Process for High Voltage Pulsed Diodes

Drift Step Recovery Diodes - DSRDs - are known since 1960s. All this time silicon DSRDs were made by basically the same technology: deep diffusion - cut into dies - stacking dies - side passivation. As technology did not change, DSRD pulse performance did not improve significantly. We suggest and experimentally validate new process flow: epitaxy - side passivation – stacking wafers - cut into stacked dies. Advantages of the new process over traditional one is described. Pulsed performance of final devices to be described in a separate paper.