Reduction of Subthreshold Swing in Zener Tunnelling-Tunnel Diode Partially Depleted Silicon On Insulator

This work reports subthreshold swing reduction in Zener tunneling-tunnel diode partialy depleted silicon on insulator (ZT-TD-PDSOI). A highly efficient metal oxide semiconductor field effect transistor switch requires subthreshold lowering. Although we have fully depleted silicon on insulator, which minimises subthreshold swing, no work has been documented the reduction of subthreshold swing in zener tunnelling-tunnel diode partially depleted silicon on insulator. The decrease in the subthreshold swing is caused by the introduction of a P+ area below the drain side. For the device’s result to be verified, the surface potential, electron and hole concentrations are examined.