Impact of Channel Length Scaling on the Performance of Recessed GaAs Channel DGJLFET

This paper reports recessed GaAs-based double gate junction-less field effect transistor (DGJLFET) for achieving improved performance that includes threshold voltage roll-off, ON to OFF current ratio, Drain Induced Barrier Lowering (DIBL), and Sub-threshold swing (SS). The proposed device aims to optimize improved electrical characteristics with channel length variation. With regard to the channel of 10 nm, recessed GaA
$s$
DGJLFET shows an
$\mathbf{I}_{\text{ON}}/\mathbf{I}_{\text{OFF}}$
value of
$8.21\times 10^{11}$
, SS of 70 mV/dee, and DIBL of 57
$\mathbf{m}\mathbf{VV}^{-1}$
, For further modification of its electrical behavior, the operation of the suggested device with regard to the variation in the length of the recessed GaAs channel could be a great target. The projected recessed GaAs DGJLFET has been modeled using the 2D SILVACO TCAD tool.