An ultra-low energy efficient topological field-effect transistor based on stanene under perpendicular electric field induced topological phase transition

To reduce energy dissipation in field-effect transistors on low-power applications such as switches, we have modeled a transistor made of 2D topological insulator zigzag stanene nanoribbon based on electric field-induced topological phase transition, which turns on and off the device. The transport properties and the device’s important parameters have been calculated by the tight-binding model and Non-Equilibrium Green’s Function formalism. The results show high on-state current density which can flow ballistically even in the presence of impurities and ultra-low dynamic power dissipation. Therefore, proof of the concept of the energy-efficient topological transistor is presented.