Proton radiation damage in p-channel CCDs fabricated on high- resistivity silicon

P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1/spl times/10/sup 11/ protons/cm/sup 2/ at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.