Optimization of thickness in hole blocking layer of AlGaN-based deep ultraviolet laser diodes

In this paper, the thickness of the hole blocking layer(HBL) is optimized to reduce the hole leakage in the n-type region and improve the operating performance of the DUV-LD. The simulation of 12nm, 13nm, 14nm and 15nm thick HBLs was carried out by Crosslight software. By analyzing the energy band diagrams, P-I characteristics and V-I characteristics of the four structures, it is concluded that the 14 nm thick HBL can effectively reduce the hole leakage and has better optoelectronic performance.