Research of GaN HEMT Against High-Power Microwave Radiation

High power microwave damage mechanism of conventional GaN HEMT was investigated by TCAD simulation. The conventional GaN HEMT devices will burn out within 100 ns when the gate injection voltage, frequency of 1 GHz, reaches 130 V. Under the action of HPM, a coupling voltage will appears at the gate electrode of the conventional GaN HEMT. With the periodic change of the coupling voltage, the peak temperature of the device presents a periodic rising trend. The gate current and the peak temperature of the device present a certain degree of positive correlation.