Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz

We report on the recent addition of an improved high performance (HP) NPN HBT to GF’s 90nm BiCMOS SiGe 9HP technology. The HP NPN with f
T
/f
max
of 340/410 GHz and medium breakdown (MB) NPN with f
T
/BV
CBO
of 150 GHz / 8.4 V have been developed as new feature options within the technology. As the improvements are made without altering the integration, the full suite of passive and CMOS elements from the original process are still available. This work presents the measured enhancements in the device performance along with the gains at the circuit level.