A High-Isolation SPDT T/R switch in 0.18-μm CMOS for Wi-Fi 7 Applications

There is an RF switch with a single-pole and double-throw (SPDT) function, which adopted a process of 0.18 μm complementary metal-oxide semiconductor (CMOS). The proposed design has an operating frequency between 2.4 to 7.125 GHz that is suitable for Wi-Fi7 band wireless local area network applications. Furthermore, the structure of body floating and stacking techniques are designed in the proposed switch device that mainly lets’s improve and keep the highpower characteristic and good isolation performance with transmit (Tx) and Receiving (Rx) ports. Therefore, the Tx and Rx paths are perfectly divided to connect the antenna port. The RF SPDT T/R switch device is controlled the operating voltage of l.SV and OV. The measurement result obtained the insertion loss of 2.915 dB for Tx status and 2.294 dB for Rx status, the return loss of 13.589 dB for Tx status and 12.897 dB for Rx status, and the isolation performance of 30.021dB for Tx status and 29. 572dB for Rx status at the operation frequency of 2.4 GHz condition. In addition, the operation frequency of 7.125 GHz is measured the insertion loss with 4.028 dB for Tx status and 3.391 dB for Rx status, the return loss with 12.772 dB for Tx status and 11.099 dB for Rx status, and the isolation performance with 22. 143dB for Tx status and 21.311dB for Rx status. The proposed design is with a die area of 545 μm×705μm with test pads and 315 μm×540μm without test pads.