Direct wafer-bonded two terminal GaAsP/Si dual junction solar cell with 19.80% efficiency

The low cost of Si material has enabled the design of III-V/Si based dual junction solar cell. The lattice mismatching between the two sub-cells leads to the Threading Dislocation density and poor current matching. In this work, we have designed direct bonded two terminal GaAsP/Si dual junction solar cell with the help of buffer layers. The current matching is improved in the lattice mis-matched solar cell by using quaternary compound AlGaInP buffer layer. The optimum efficiency of 19.80% is achieved under 1-Sun illumination using AM1.5G global spectrum.