Thermal Effects on Performance Parameters of Gate Stack DG-MOSFET based Biosensor

The Gate Stack DG MOSFET performance for electrical detection of biomolecules like enzymes, cells, DNA, etc. with respect to temperature variations has been examined and compared in this paper. With the use of the dielectric modulation approach, biomolecules such as protein undergo a label-free electrical detection in an effort to overcome effectively the short channel effect’s drawbacks. The electrical characteristics of the MOSFET are altered by the neutral biomolecules trapped inside the cavity area. Short channel effects (SCEs), scale concerns, and power supply issues are problems with MOSFET-based biosensors.As a result, the suggested device is built in a better way to endure the SCEs and substituted as an alternative in biosensing applications. The performance of the device and its characteristics is evaluated by taking into account the Protein (K=2.5) as a biomolecule in the cavity. The material employed as the channel is silicon which is stacked with HfO
2
. The device’s performance metrics are examined in relation to temperature fluctuations ( i.e -30°C to 50°C). The sensing characteristics of the bio-sensor are examined at various temperatures, including low, normal, and high. The device structure is designed using two distinct oxide materials, HfO2 (K = 25) and SiO2 (K = 3.9). 2D TCAD Sentarus Simulator has been utilized for simulation.