Source Extended GaSb/GaAs Heterojunction GAATFET to Improve ION/IOFF Ratio

In this article, we have proposed and investigated a gate-all-around TFET with source extension (GAA-ES-TFET) to improve the dc parameters. The source is placed inside the channel where there is a probability of occurrence of both the point and vertical tunneling in device near Channel/source interface. The investigations are carried out with Sentaurus tool. The optimized parameters of the proposed device (GAA-ES-TFET) obtains a subthreshold swing of 31.2 mV/Dec along with the lower threshold voltage of 0.42V Furthermore, the proposed device captures the switching ratio of 1.17 × 10
¹³
.