A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications

This paper describes a power amplifier(PA) that performs around 28 GHz for fifth generation mobile networks (5G) using
$0.15-\mu \mathrm{m}$
E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) devices. The power amplifier with three-stage common-source architecture achieved a small signal gain of 16.7 dB, the output 1-dB compression power (OP1dB) of 22.8 dBm, and the power added efficiency at peak power of 20.5% at 28 GHz under 3-V supply voltage. At 27GHz the small signal gain is 18 dB, the OP1dB is 21.7 dBm, and the poweradded efficiency at peak power is 16.3% under 3-V supply voltage.