Comparison of Current-Voltage Characteristics of Molybdenum Disulfide and Molybdenum Diselenide Channel Material Based Field Effect Transistor to optimize Conductance

The work aims to improve the current and conductance characteristics of molybdenum disulfide (MOS2) and compare it with molybdenum diselenide (MOSE2) in a Novel transistor by varying their oxide thickness ranging from 1 nm to 10 nm. The electrical conductance of MOS2 based 2D Field-effect transistor was compared with MOSE2 based novel transistor by varying the oxide thickness ranging from 1 nm to 10 nm in NanoHub© tool simulation environment. MOS2 based novel transistor has significantly higher conductance than MOSE2 based 2D FET. The optimal gate oxide thickness for maximum conductivity was 1 nm for MOSE2 based 2D FET and 10 nm for MOS2 based novel transistor. The results were obtained with a level of significance 0.01 and pretest power value of 80% using SPSS tools. Within the limit of study, MOS2 based novel 2D FET has better current (2899.72) and conductance (9.665e-03) mho characteristics than MOSE2 based 2D FET current (2882.55) and conductance (9.608e-03) mho.