A Novel Evaluation Methodology for the Reliability and Lifetime of 200 mm E-Mode GaN-on-Si Power HEMTs

In this article, a novel evaluation methodology for the reliability and lifetime of E-mode AlGaN/GaN high electron mobility transistors (HEMTs) has been proposed. A practical example of reliability evaluation is presented for commercial 100 V E-mode GaN-on-Si power HEMTs, which are fabricated on an industrial 200 mm Si CMOS compatible technology platform. First, wafer-level reliability test (WLRT), Joint Electron Device Engineering Council (JEDEC) qualification, and dynamic high-temperature operating life (DHTOL) test of 200 mm GaN-on-Si power HEMTs for mass production have been carried out. Second, the relationships of WLRT with JEDEC and DHTOL have been found; therefore, a fast evaluation method for the reliability of commercial 100 V E-mode GaN-on-Si power devices has been established. Finally, DHTOL and switching accelerated lifetime test have been carried out to demonstrate the validity of the fast evaluation method. In summary, it is proved that the novel evaluation methodology can better screen the robust GaN power devices and greatly simplify the reliability testing flow of commercial 200 mm GaN-on-Si power devices for mass production.