A Wideband Low-Noise Amplifier in 0.13-µm CMOS

This paper designs a wideband low-noise amplifier (LNA) covering wideband of 7-18 GHz. This wideband LNA design adopts the shunt-series peaking technique to improve the high frequency gain response, and three-stage amplifier further extends the bandwidth (BW). The unique properties of ladder filter are used to match an inductively degenerated transistor to a 50 $\Omega$source over a wide band. Based on the 0.13-$\mu$m CMOS process, the simulation results show that the wideband LNA achieves a gain flatness of 22 ± 0.5 dB in the range of 7-18 GHz, the return loss (S$_{\mathbf{11}}$) is less than −9.6 dB, the whole circuit noise Figure (NF) is 2.29-2.7 dB.