High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-Resistors

A 300-V-rated high-performance SOI-LIGBT with double-integrated MOS resistors (MR LIGBT) is proposed and its mechanism is investigated. It features double-integrated self-adapted MOS resistors
${R}_{\text {M1}}$
and
${R}_{\text {M2}}$
.
${R}_{\text {M1}}$
and
${R}_{\text {M2}}$
influence states of the parasitic diode
${D}_{{0}}$
in the conventional LIGBT region and parasitic diode
${D}_{{1}}$
in
${R}_{\text {M1}}$
by modulating the potential of
${P}^{+}{(}{V}_{\text {P}}{)}$
and
${N}^{+}{(}{V}_{\text {N}}{)}$
near the trench gate. In the ON-state, the adaptive turn-on
${D}_{{0}}$
caused by the large
${R}_{\text {M1}}$
enhances the conductivity modulation. When
${D}_{{1}}$
is triggered at a high anode voltage,
${V}_{\text {N}}$
is clamped and the device turns into saturation. The turn-on
${D}_{{0}}$
increases the saturation current density of the MR LIGBT to
$2.5\times $
of self-adjust conductivity modulation trench (SCMT) LIGBT and reduces the ON-state voltage drop (
${V}_{\text {on}}$
) by 49% and 36% compared with conventional (Con.) LIGBT and SCMT LIGBT, respectively.
${D}_{{0}}$
adaptively turns off during short-circuit and turn-off periods. Consequently, compared with the Con. and SCMT LIGBTs, the MR LIGBT not only lengthens the short-circuit time (
${t}_{\text {SC}}$
) to
$24.7~\mu \text{s}$
from 7.12 to
$19.8~\mu \text{s}$
, but also decreases
${E}_{\text {off}}$
by 74% and 54% at the same
${V}_{\text {on}}$
. Owing to the prominent static and dynamitic characteristics, the total power loss of the MR LIGBT is reduced by 28% and 40% at
${f} =50$
kHz compared with that of SCMT and Con. LIGBTs.