Study the Effect of Buried P-base in GP-MOS on Device UIS, SC and Gate Oxide Electric field Characteristics

In this paper, based on the TCAD simulation platform, the single-shot unclamped inductive switching (UIS) characteristics, short-circuit (SC) characteristics and gate oxide electric field reliability of the BP-GPMOS structure which has a buried P-base in GP-MOS structure are studied. The simulation results show that compared with the traditional GP-MOS devices, the SC tolerance time of BP-GPMOS is increases by 30%, the UIS tolerance time increases by 37.5%, the maximum electric field of the gate oxide reduces by 27.3%. The BP-GPMOS has significantly improved SC, UIS characteristics and gate oxide electric reliability of device.