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E. Kaldoudi - IEEE Xplore Author Profile
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E. Kaldoudi

Also published under: Eleni Kaldoudi

Publications
12
Citations
176
Publications by Year
20082017
Co-Authors:
Show All Co-Authors (29)
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E. Kaldoudi

Also published under: Eleni Kaldoudi

Affiliation

School of Medicine
Democritus University of Thrace
Alexandroupoli, Greece

Publication Topics

Biography

Eleni Kaldoudi (M'94) received the Diploma degree in Physics from the Aristotle University of Thessaloniki, Thessaloniki, Greece, in 1987, the M. Sc. degree in medical physics and a Certificate in Management Studies from the University of Surrey, Surrey, U.K., in 1989, and the Ph.D. degree in medical physics and bioengineering from University College London, London, U.K., in 1994.,She is currently an Assistant Professor in physics of medical imaging–telemedicine at the School of Medicine, Democritus, University of Thrace, Alexandroupolis, Greece. She was an Associate Researcher in the Institute of Computer Science, Foundation of Research and Technology–Hellas. Her research interests include medical informatics and telematics, with emphasis ...
Publications
12
Citations
176
Publications by Year
20082017
Co-Authors:
Show All Co-Authors (29)
Author's Published Works

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JFET/SOS devices: processing and gamma radiation effects

Nie Jiping;Liu Zhongli;He Zhijing;Yu Fang;Li Guohua

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
A process for fabricating n-channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p/sup +/-n junction was obtained by diffusion, and the conductive channel formed by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co/sub 60/ /spl gamma/-ray irra...Show More

JFET/SOS devices: processing and gamma radiation effects

Nie Jiping;Liu Zhongli;He Zhijing;Yu Fang;Li Guohua

Year: 1998 | Conference Paper |

Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Liu Zhongli;He Zhijing;Yu Fang;Nie Jiping;Yu Yuanhuan

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which ...Show More

Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy

Liu Zhongli;He Zhijing;Yu Fang;Nie Jiping;Yu Yuanhuan

Year: 1998 | Conference Paper |

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