Author details
![Image of author Hiroyuki Yamauchi](/mediastore/IEEE/content/freeimages/8919/8883027/8787897/yamau-2928043-small.gif)
Hiroyuki Yamauchi
Also published under: H. Yamauchi
Affiliation
Fukuoka Institute of Technology
Biography
Hiroyuki Yamauchi (M'98) received the Ph.D.degree in engineering from Kyusyu University, Fukuoka, Japan, in 1997. His doctoral dissertation was on “Low Power Technologies for Battery-Operated Semiconductor Random Access Memories.”,In 1985, he joined the Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., Osaka, Japan. From 1985 to 1987, he worked on the research of the submicron MOS FET model-parameter extraction for the circuit simulation and the research of the sensitivity of the scaled sense amplifier for ultrahigh-density DRAMs, which was presented at the 1989 Symposium on VLSI Circuits. From 1988 to 1994, he was engaged in research and development of 16-Mb CMOS DRAMs including the battery-operated high-speed 16... Author's Published Works