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III–V-based low power CMOS devices on Si platform
S. Takagi;D. H. Ahn;T. Gotow;M. Noguchi;K. Nishi;S.-H. Kim;M. Yokoyama;C.-Y. Chang;S.-H. Yoon;C. Yokoyama;M. Takenaka
2017 IEEE International Conference on IC Design and Technology (ICICDT)
Year: 2017 | Conference Paper |
Cited by: Papers (2)
CMOS utilizing high mobility III–V channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunnel FETs (TFETs) using III–V channel materials are regarded as one of the most promising steep slope devices for the ultra-low power app...Show More
High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
K. Nishi;M. Yokoyama;H. Yokoyama;T. Hoshi;H. Sugiyama;M. Takenaka;S. Takagi
2015 Symposium on VLSI Technology (VLSI Technology)
Year: 2015 | Conference Paper |
Cited by: Papers (8)
We have demonstrated the front-gate (FG) III-V single structure CMOS using ultra-thin body (UTB) InAs/InGaSb on insulator (-OI) on Si substrates with high hole mobility (μeff) of 240 cm2V-1s-1. We have found that the μeff is enhanced by the buffered-HF (BHF)-cleaned InAs MOS interfaces, Ni alloy S/D, and the InAs/strained InGaSb-OI hetero-interface channel. The CMOS operation using FG InAs/InGaSb-...Show More
Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect
Minsoo Kim;Yuki K. Wakabayashi;Masafumi Yokoyama;Ryosho Nakane;Mitsuru Takenaka;Shinichi Takagi
Ge/Si heterojunction tunnel field-effect transistors (TFETs) with an Al2O3 gate-stack are demonstrated. The high performances of steep subthreshold swing (SS) of 58 mV/decade and large ION/IOFF ratio over 107 are realized by a proper postmetallization annealing (PMA) process. We can obtain the high-quality Al2O3/Ge interface with Dit of as low as ~1011 cm-2eV-1 by electron cyclotron resonance oxyg...Show More
High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs
Minsoo Kim;Yuki Wakabayashi;Ryosho Nakane;Masafumi Yokoyama;Mitsuru Takenaka;Shinichi Takagi
2014 IEEE International Electron Devices Meeting
Year: 2014 | Conference Paper |
Cited by: Papers (24)
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, Eg.eff. Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high Ion/Io...Show More
High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si
S. H. Kim;Y. Ikku;M. Yokoyama;R. Nakane;J. Li;Y. C. Kao;M. Takenaka;S. Takagi
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
Year: 2014 | Conference Paper |
Cited by: Papers (18)
In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III-V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fa...Show More
III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
Year: 2014 | Conference Paper |
Cited by: Papers (11)
We propose and demonstrate the operation of single structure III-V CMOS transistors by using metal S/D ultrathin body (UTB) InAs/GaSb-on-insulator (-OI) channels on Si wafers. It is found that the CMOS operation of the InAs/GaSb-OI channel is realized by using ultrathin InAs layers, because of the quantum confinement of the InAs channel and the tight gate control. The quantum well (QW) InAs/GaSb-O...Show More
Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding
Koichi Nishi;Masafumi Yokoyama;Haruki Yokoyama;Mitsuru Takenaka;Shinichi Takagi
26th International Conference on Indium Phosphide and Related Materials (IPRM)
Year: 2014 | Conference Paper |
Cited by: Papers (3)
We have demonstrated the operation of thin body GaSb-on-insulator (GaSb-OI) p-MOSFETs on Si wafers fabricated by direct wafer boding (DWB). We have developed a wafer-scale transfer technique for transferring ultrathin GaSb layers to Si wafers. We have found that the hole mobility of the thin body GaSb-OI p-MOSFETs depends on the GaSb thickness and the GaSb channel surface condition.Show More
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability
Sang-Hyeon Kim;Masafumi Yokoyama;Ryosho Nakane;Osamu Ichikawa;Takenori Osada;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAsOI MOSFETs with fin width of the top surfac...Show More
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs
SangHyeon Kim;Masafumi Yokoyama;Yuki Ikku;Ryosho Nakane;Osamu Ichikawa;Takenori Osada;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
In this paper, we have fabricated uniaxially tensile strained In0.33Ga0.47As-OI MOSFETs, for the first time, using a lateral strain relaxation technique. A stripe-like line structure was fabricated from biaxially-strained In0.53Ga0.47As-OI. This structure exhibits the lateral strain relaxation. We have found that μeff in strained In0.53Ga0.47As-OI MOSFETs decreases with a decrease in the gate widt...Show More
Ultra-thin body MOS device technologies using high mobility channel materials
S. Takagi;S.-H. Kim;M. Yokoyama;W.-K. Kim;R. Zhang;M. Takenaka
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime [1, 2]. From this viewpoint, attentions have recently been paid to III-V and Ge channels. This is because III-V semiconductors have extremely high electron mobility and low electron effective mass and Ge has extremely h...Show More
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions
Munetaka Noguchi;SangHyeon Kim;Masafumi Yokoyama;SangMin Ji;Osamu Ichikawa;Takenori Osada;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
2013 IEEE International Electron Devices Meeting
Year: 2013 | Conference Paper |
Cited by: Papers (22)
We have demonstrated the operation of high Ion/Ioff and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. It has been found that the solid-phase Zn diffusion can form steep-profile and defect-less p+/n source junctions because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The present devices have ex...Show More
High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability
Sang Hyeon Kim;M. Yokoyama;R. Nakane;O. Ichikawa;T. Osada;M. Hata;M. Takenaka;S. Takagi
2013 IEEE International Electron Devices Meeting
Year: 2013 | Conference Paper |
We have investigated the effects of vertical scaling and the tri-gate structure on electrical properties of extremely-thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that body thickness (Tbody) scaling provides better SCEs control, whereas Tbody scaling causes the reduction of the mobility limited by channel thickness fluctuation (δTbody) scattering (μfluctuation). To achieve better ...Show More
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors
Noriyuki Taoka;Masafumi Yokoyama;Sang Hyeon Kim;Rena Suzuki;Sunghoon Lee;Ryo Iida;Takuya Hoshii;Wipakorn Jevasuwan;Tatsuro Maeda;Tetsuji Yasuda;Osamu Ichikawa;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
We have quantitatively evaluated the interface trap density inside the conduction band (CB) of $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ metal–oxide–semiconductor (MOS) structures and have systematically investigated the impact of the interface traps inside the CB on the inversion-layer mobility in $\hbox{In}_{x} \hbox{Ga}_{1 - x}\hbox{As}$ MOS field-effect transistors with various interface struc...Show More
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors
Noriyuki Taoka;Masafumi Yokoyama;Sang Hyeon Kim;Rena Suzuki;Sunghoon Lee;Ryo Iida;Takuya Hoshii;Wipakorn Jevasuwan;Tatsuro Maeda;Tetsuji Yasuda;Osamu Ichikawa;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
SangHyeon Kim;Masafumi Yokoyama;Ryosho Nakane;Osamu Ichikawa;Takenori Osada;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
We have systematically analyzed the components of source/drain (S/D) resistance (RSD) in InGaAs n-MOSFETs with Ni-InGaAs metal S/D. It is found that Ni-InGaAs has a low resistivity of ~250 μΩ·cm in a thickness of Ni-InGaAs (TNi-InGaAs) of down to ~4 nm. Contact resistance between the contact pads and Ni-InGaAs (RC) is found to be the most dominant component of RSD in control InGaAs MOSFETs, becaus...Show More
High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology
S. H. Kim;M. Yokoyama;R. Nakane;O. Ichikawa;T. Osada;M. Hata;M. Takenaka;S. Takagi
In this paper, we presents 20-nm-channel length (Lch) high performance InAs-on-insulator (-OI) MOSFETs on Si substrates with Ni-InGaAs metal source/drain (S/D) employing a new contact resistance reduction technology. The devices provide high maximum on-current (Ion) and maximum transconductance (Gm) of 2.38 mA/μm and 1.95 mS/μm at drain voltage (VD) of 0.5 V. This high performance is attributable ...Show More
Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates
S. H. Kim;M. Yokoyama;R. Nakane;O. Ichikawa;T. Osada;M. Hata;M. Takenaka;S. Takagi
We report the first demonstration of strained In0.53Ga0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In0.53Ga0.47As-OI structures were successfully fabricated on Si by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1....Show More
Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties
Masafumi Yokoyama;Yuji Asakura;Haruki Yokoyama;Mitsuru Takenaka;Shinichi Takagi
2013 International Conference on Indium Phosphide and Related Materials (IPRM)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides fr...Show More
Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs
S. H. Kim;M. Yokoyama;R. Nakane;O. Ichikawa;T. Osada;M. Hata;M. Takenaka;S. Takagi
2013 International Conference on Indium Phosphide and Related Materials (IPRM)
Year: 2013 | Conference Paper |
Cited by: Papers (1)
Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.Show More
Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
Sanghyeon Kim;Masafumi Yokoyama;Noriyuki Taoka;Ryosho Nakane;Tetsuji Yasuda;Osamu Ichikawa;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
We report the operation of sub-60-nm deeply scaled InGaAs- and InAs-on-insulator (-OI) MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). InAs-OI MOSFETs provide 400% Ion enhancement, compared with an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement an...Show More
Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
Sanghyeon Kim;Masafumi Yokoyama;Noriyuki Taoka;Ryosho Nakane;Tetsuji Yasuda;Osamu Ichikawa;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering
SangHyeon Kim;Masafumi Yokoyama;Noriyuki Taoka;Ryo Iida;Sung-Hoon Lee;Ryosho Nakane;Yuji Urabe;Noriyuki Miyata;Tetsuji Yasuda;Hisashi Yamada;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
In this paper, we study the electron transport properties of thin-body InxGa1-xAs-on-insulator (InxGa1-xAs-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using two types of mobility enhancement engineering: an increase in the Indium (In) content of InGaAs channels and MOS interface buffer engineering. We have demonstrated a high peak mobility of 3180 cm2/(V·s) in our InAs-on-insu...Show More
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering
SangHyeon Kim;Masafumi Yokoyama;Noriyuki Taoka;Ryo Iida;Sung-Hoon Lee;Ryosho Nakane;Yuji Urabe;Noriyuki Miyata;Tetsuji Yasuda;Hisashi Yamada;Noboru Fukuhara;Masahiko Hata;Mitsuru Takenaka;Shinichi Takagi
MOS interface and channel engineering for high-mobility Ge/III-V CMOS
S. Takagi;R. Zhang;S.-H Kim;N. Taoka;M. Yokoyama;J.-K. Suh;R. Suzuki;M. Takenaka
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/process/integration technologies of Ge/III-V n- and pMOSFETs for satisfying requirements of future node MOSFETs have not been established yet. In this pape...Show More
Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties
Masafumi Yokoyama;Noriyuki Taoka;Rena Suzuki;Osamu Ichikawa;Hisashi Yamada;Noboru Fukuhara;Masahiko Hata;Masakazu Sugiyama;Yoshiaki Nakano;Mitsuru Takenaka;Shinichi Takagi
2012 International Conference on Indium Phosphide and Related Materials
Year: 2012 | Conference Paper |
Cited by: Papers (4)
We have studied the impact of sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interfaces using an (NH4)2Sx solution. We found that the sulfur cleaning can effectively remove native oxides from InGaAs surfaces and passivate the InGaAs surfaces by sulfur atoms. Combining with trivalent oxide passivation using Al2O3, the Al2O3/...Show More
Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties
Masafumi Yokoyama;Noriyuki Taoka;Rena Suzuki;Osamu Ichikawa;Hisashi Yamada;Noboru Fukuhara;Masahiko Hata;Masakazu Sugiyama;Yoshiaki Nakano;Mitsuru Takenaka;Shinichi Takagi
Year: 2012 | Conference Paper |
Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering
S. H. Kim;M. Yokoyama;N. Taoka;R. Nakane;T. Yasuda;O. Ichikawa;N. Fukuhara;M. Hata;M. Takenaka;S. Takagi
We report the first demonstration of sub-60 nm deeply-scaled InGaAs- and InAs-on-insulator MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). The devices provide 400 % Ion enhancement, when comparing to that of an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility e...Show More
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