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Zhiqian Bo

Also published under: Z. Q. Bo, Z. Bo, ZhiQian Bo, Zhi-qian Bo, Zhi Qian Bo, Zhi-Qian Bo, Zhiq Qian Bo, Zhiqian Q. Bo, Zhiqin Bo

Publications

234

Citations

2,324

Publications by Year

19932023

Co-Authors:

Owolabi Sunday AdioR. K. AggarwalLi BaiYang BaiBenteng He

Show All Co-Authors (310)

Zhiqian Bo

Also published under: Z. Q. Bo, Z. Bo, ZhiQian Bo, Zhi-qian Bo, Zhi Qian Bo, Zhi-Qian Bo, Zhiq Qian Bo, Zhiqian Q. Bo, Zhiqin Bo

Affiliation

Faculty of Electric Power Engineering

Kunming University of Science and Technology

Kunming, China

Publication Topics

Differential Protection,
Bus Voltage,
Current Difference,
Dc Bus Voltage,
Dc Microgrid,
Distribution Network,
Frequency Power,
Internal Defects,
Operation Mode,
Outer Control Loop,
Power Grid,
Protection Devices

Biography

Zhiqian Bo received his BSc degree from the Northeastern University, China in 1982 and PhD degree from The Queen‘s University of Belfast, UK in 1988 respectively. Presently, he is with AREVA T &D Substation Automation Solution Business. Email: zhiqian.bo@areva-td.com(Based on document published on 22 March 2011).

Publications

234

Citations

2,324

Publications by Year

19932023

Co-Authors:

Owolabi Sunday Adio
R. K. Aggarwal
Li Bai
Yang Bai
Benteng He

Show All Co-Authors (310)

Author's Published Works

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Showing 1-3 of 3 results

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Conferences (1)

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Kosuke Ota(3)
Jun Tsunoda(2)
Atsushi Hiraiwa(2)
Hiroshi Kawarada(2)
Naoya Niikura(1)
Faculty of Science and Engineering, Waseda University, Tokyo, Japan(1)
Faculty of Science and Engineering, Waseda University, Shinjuku-ku, Tokyo, Japan(1)
Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, Japan(1)
Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Tokyo, Japan(1)
Faculty of Science and Engineering, Institute of Nano-Science and Nano-Engineering, Waseda University, Tokyo, Japan(1)
2024 IEEE 29th Asia Pacific Conference on Communications (APCC)(1)
IEEE Electron Device Letters(1)
IEEE Transactions on Electron Devices(1)
IEEE(3)
BALI, Indonesia(1)
Drain Current(2)
Field-effect Transistors(2)
Gate Electrode(2)
Gate Width(2)
Power Devices(2)

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Overloaded Multi-User MIMO With Receive Spatial Filters

Kosuke Ota;Satoshi Denno;Yafei Hou

2024 IEEE 29th Asia Pacific Conference on Communications (APCC)

Year: 2024 | Conference Paper |

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This paper proposes overloaded multiuser multiple-input-multiple-output (MU-MIMO) that is able to increase network throughput by increasing the number of the signal streams to more than that of receive antennas. The spatial filter is employed at each user for such spatial multiplexing. In addition, the proposed overloaded MU-MIMO applies the non-linear precoding with the lattice reduction for impr...Show More

Overloaded Multi-User MIMO With Receive Spatial Filters

Kosuke Ota;Satoshi Denno;Yafei Hou

2024 IEEE 29th Asia Pacific Conference on Communications (APCC)

Year: 2024 | Conference Paper |

580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P− -Drift Layer

Jun Tsunoda;Naoya Niikura;Kosuke Ota;Aoi Morishita;Atsushi Hiraiwa;Hiroshi Kawarada

IEEE Electron Device Letters

Year: 2022 | Volume: 43, Issue: 1 | Journal Article |

Cited by: Papers (10)

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This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p−-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm2V−1s−1, and a specific on-resistance of 23 $\te...Show More

580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P− -Drift Layer

Jun Tsunoda;Naoya Niikura;Kosuke Ota;Aoi Morishita;Atsushi Hiraiwa;Hiroshi Kawarada

IEEE Electron Device Letters

Year: 2022 | Volume: 43, Issue: 1 | Journal Article |

Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

Jun Tsunoda;Masayuki Iwataki;Kiyotaka Horikawa;Shotaro Amano;Kosuke Ota;Atsushi Hiraiwa;Hiroshi Kawarada

IEEE Transactions on Electron Devices

Year: 2021 | Volume: 68, Issue: 7 | Journal Article |

Cited by: Papers (10)

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Diamonds are highly favored materials in high-temperature and high-power operations owing to their excellent characteristics, and diamond p-channel field-effect transistors (p-FETs) considerably aid in the improvement of CMOS technology, providing high performance, which is essential for inverter operations. This study demonstrates a low ON-resistance (001) vertical-type two-dimensional hole gas (...Show More

Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

Jun Tsunoda;Masayuki Iwataki;Kiyotaka Horikawa;Shotaro Amano;Kosuke Ota;Atsushi Hiraiwa;Hiroshi Kawarada

IEEE Transactions on Electron Devices

Year: 2021 | Volume: 68, Issue: 7 | Journal Article |

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