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Yuxuan Liu - IEEE Xplore Author Profile

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Yuxuan Liu

Publications

3

Citations

1

Publications by Year

20232025

Co-Authors:

Haohui CaiJian ChenChunlong HeYingyu LiGuangming Shi

Show All Co-Authors (11)

Yuxuan Liu

Affiliation

School of Electronic and Information Engineering

Harbin Institute of Technology

Shenzhen, China

Publication Topics

Internet Of Vehicles,
Radio Waves,
Baseline Algorithms,
Carrier Frequency,
Clustered Federated Learning,
Computation Offloading,
Computational Efficiency,
Constellation Diagram,
Continuous Wave,
Convolutional Layers,
Convolutional Neural Network,
Data Distribution

Publications

3

Citations

1

Publications by Year

20232025

Co-Authors:

Haohui Cai
Jian Chen
Chunlong He
Yingyu Li
Guangming Shi

Show All Co-Authors (11)

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Naoki Yonezawa(1)
Tatsuya Ohguro(1)
Kyoichi Suguro(1)
Tatsuya Nishiwaki(1)
Akira Komatsu(1)
Discrete Semiconductor Division, Toshiba Electronic Devices & Storage Corporation, Tokyo, Japan(1)
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)(1)
IEEE(1)
Shanghai, China(1)
Alignment Marks(1)
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Double Plate(1)
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Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices

Hitoshi Kobayashi;Tatsuya Ohguro;Tetsuya Kai;Takako Motai;Masaaki Ogawa;Mie Matsuo;Kenichi Oohashi;Shinsuke Kozumi;Yoshiharu Takada;Hideharu Kojima;Shingo Masuko;Naoki Yonezawa;Akira Komatsu;Tatsuya Nishiwaki;Takuma Hara;Mari Takahashi;Akira Ezaki;Kenichi Ohtsuka;Seiji Inumiya;Kyoichi Suguro

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Year: 2019 | Conference Paper |

Cited by: Papers (3)

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In this work, we have developed vertical Si power MOSFETs with high performance and high reliability by using Cu double side plating technology. 20 μ m thick Cu plating layers are formed on both sides of devices with 50 μ m thick Si substrate. In this structure, even though Si substrate is thinner, Safety Operating Area (SOA) is wider and the warpage of chip is smaller thanks to front and back sid...Show More

Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices

Hitoshi Kobayashi;Tatsuya Ohguro;Tetsuya Kai;Takako Motai;Masaaki Ogawa;Mie Matsuo;Kenichi Oohashi;Shinsuke Kozumi;Yoshiharu Takada;Hideharu Kojima;Shingo Masuko;Naoki Yonezawa;Akira Komatsu;Tatsuya Nishiwaki;Takuma Hara;Mari Takahashi;Akira Ezaki;Kenichi Ohtsuka;Seiji Inumiya;Kyoichi Suguro

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Year: 2019 | Conference Paper |

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