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Kanaparthi V. Phani Kumar - IEEE Xplore Author Profile

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Author details

Kanaparthi V. Phani Kumar

Also published under: V. Phani Kumar Kanaparthi

Publications

2

Citations

3

Publications by Year

20222024

Co-Authors:

Sandeep Kumar PalaniswamyRengasamy RajkumarShaik RizwanRama Rao T.Vamsi Krishna Velidi

Kanaparthi V. Phani Kumar

Also published under: V. Phani Kumar Kanaparthi

Affiliation

Diagnostics

Therapeutics

and Assistive Devices Laboratory, Department of Electronics and Communication Engineering, Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, India

Publication Topics

Bandwidth Size,
Center Frequency,
Circuit Area,
Compact Size,
Design Equations,
Design Procedure,
Design Theory,
Electrical Length,
Even And Odd,
Filtered Based,
Full-wave Simulation,
High Selectivity

Publications

2

Citations

3

Publications by Year

20222024

Co-Authors:

Sandeep Kumar Palaniswamy
Rengasamy Rajkumar
Shaik Rizwan
Rama Rao T.
Vamsi Krishna Velidi

Author's Published Works

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Showing 1-25 of 116 results

Conferences (76)

Journals (37)

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G.I. Ng(38)
Geok Ing Ng(34)
S. Arulkumaran(28)
G. I. Ng(27)
D. Pavlidis(27)
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore(18)
School of EEE, Nanyang Technological University, Singapore(12)
Temasek Laboratories, Nanyang Technological University, Singapore(12)
Nanyang Technological University, Singapore, Singapore, SG(12)
Temasek Laboratories@NTU, Nanyang Technological University, Singapore(8)
IEEE Electron Device Letters(17)
IEEE Transactions on Electron Devices(9)
1993 (5th) International Conference on Indium Phosphide and Related Materials(3)
2019 Electron Devices Technology and Manufacturing Conference (EDTM)(3)
IEEE Microwave and Guided Wave Letters(3)
IEEE(116)
Singapore(15)
Paris, France(5)
Santa Barbara, CA, USA(5)
San Diego, CA, USA(3)
Boston, MA, USA(2)
High Electron Mobility Transistors(32)
Si Substrate(26)
Heterostructures(22)
Gate Length(21)
Equivalent Circuit(18)

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AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 12 | Journal Article |

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This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV,

$\le 5$ V) RF operation. The proposed transistor shows excellent DC (

${I}_{\textit {dmax}} =1.9$ A/mm,

${g}_{\textit {mmax}} =0.66$ S/mm) and RF small-signal characteristics (

${f}_{T}$ /

${f}_{\textit {max}} =145$ /195 GHz). Continuous-wave (CW) load-pull measurements at...Show More

AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Hanchao Li;Hanlin Xie;Qingyun Xie;Siyu Liu;Yue Wang;Yuxuan Wang;Kumud Ranjan;Yihao Zhuang;Xiao Gong;Geok Ing Ng

IEEE Electron Device Letters

Year: 2024 | Volume: 45, Issue: 12 | Journal Article |

CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs

Hanlin Xie;Zhihong Liu;Wenrui Hu;Yu Gao;Kenneth E. Lee;Yong-Xin Guo;Geok Ing Ng

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

Year: 2021 | Conference Paper |

Cited by: Papers (4)

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In this work we demonstrated InAlN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate fabricated with Si CMOS-compatible metallization process for RF power amplifier applications in 5G low power mobile SOCs. The HEMTs exhibited a maximum drain current ($I_{\text{dmax}}$) of 1.9 A/mm, a peak transconductance ($g_{\mathrm{m}}$) of 490 mS/mm, a cutoff frequency ($f_{\mathrm{T}}$) of ...Show More

CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs

Hanlin Xie;Zhihong Liu;Wenrui Hu;Yu Gao;Kenneth E. Lee;Yong-Xin Guo;Geok Ing Ng

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

Year: 2021 | Conference Paper |

100 nm T-gate GaN-on-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications

Hanlin Xie;Zhihong Liu;Yu Gao;Kenneth E. Lee;Geok Ing Ng

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2021 | Conference Paper |

Cited by: Papers (4)

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100 nm T-gate GaN-on-Si HEMTs fabricated using CMOS-compatible Au-free Ta/Al ohmic and Ti/Al gate contacts are reported in this work. The device exhibited a maximum drain current of 1.82 A/mm, a peak transconductance of 489 mS/mm, a cut-off frequency fT of 102 GHz, and a maximum oscillation frequency fmax of 114 GHz. Good RF performance comparable to their counterparts with Au-contained processes ...Show More

100 nm T-gate GaN-on-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications

Hanlin Xie;Zhihong Liu;Yu Gao;Kenneth E. Lee;Geok Ing Ng

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2021 | Conference Paper |

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

Hanlin Xie;Zhihong Liu;Wenrui Hu;Zheng Zhong;Kenneth Lee;Yong-Xin Guo;Geok Ing Ng

IEEE Microwave and Wireless Components Letters

Year: 2021 | Volume: 31, Issue: 2 | Journal Article |

Cited by: Papers (18)

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GaN-on-Si high electron mobility transistors (HEMTs) were fabricated using Si CMOS-compatible metallization scheme for RF power amplifiers (PAs)in 5G low-power mobile system-on-chips (SoCs). Ta/Al metals were adopted for the ohmic contact formation. The device with 80-nm rectangular gate exhibited a drain current (Idmax) of 1.95 A/mm, a peak transconductance (gm) of 471 mS/mm, a cutoff frequency (...Show More

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

Hanlin Xie;Zhihong Liu;Wenrui Hu;Zheng Zhong;Kenneth Lee;Yong-Xin Guo;Geok Ing Ng

IEEE Microwave and Wireless Components Letters

Year: 2021 | Volume: 31, Issue: 2 | Journal Article |

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$-particle detection

A. Sandupatla;S. Arulkumaran;K. Ranjan;G. I. Ng;P. P. Murumu;J. Kennedy;M. Deki;S. Nitta;Y. Honda;H. Amano

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2020 | Conference Paper |

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Low leakage current Schottky barrier diodes (SBDs) were fabricated on $\mathbf{30}\ \mu\mathbf{m}$ thick Mg-compensated GaN drift layer (DL) grown on a free-standing GaN substrate and tested up to 5.48 MeV $\alpha$ -particle energy. The Mg-compensated $\mathbf{30}\ \mu\mathbf{m}$ thick n--GaN DL was grown by MOCVD with low charge carrier density (CCD) of $\mathbf{4.1}\times \mathbf{10}^{\mathbf{15...Show More

Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$-particle detection

A. Sandupatla;S. Arulkumaran;K. Ranjan;G. I. Ng;P. P. Murumu;J. Kennedy;M. Deki;S. Nitta;Y. Honda;H. Amano

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2020 | Conference Paper |

Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond

K. Ranjan;S. Arulkumaran;G. I. Ng;A. Sandupatla

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2020 | Conference Paper |

Cited by: Papers (1)

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The interface trap behavior in SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky HEMTs on CVD diamond was studied using parallel conductance techniques. In MISHEMTs, two different types of traps were identified, fast with the time constant $\tau_{\mathbf{T}}\equiv(\mathbf{0.1}-\mathbf{3.6})\mu\mathbf{s}$ and slow with $\tau_{\mathbf{T}}\equiv\...Show More

Low interface trap density in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on CVD-Diamond

K. Ranjan;S. Arulkumaran;G. I. Ng;A. Sandupatla

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

Year: 2020 | Conference Paper |

Boron Nitride Coated Three-Dimensional Graphene as an Electrically Insulating Electromagnetic Interference Shield

Zhi Lin Ngoh;Fei Ni Leong;Roland Yingjie Tay;Matthew David Whiteside;Soon Siang Chng;Jong Jen Yu;Siu Hon Tsang;Dunlin Tan;Geok Ing Ng;Edwin Hang Tong Teo

2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

Year: 2019 | Conference Paper |

Cited by: Papers (3)

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We demonstrate the potential of a novel hybrid nanostructure three-dimensional graphene (3D-C) coated with boron nitride (BN) as an electromagnetic interference (EMI) shield. BN, deposited by sputtering, encapsulates 3D-C to form a light-weight graphene based EM shield that has an electrically insulating exterior. The BN deposited on 3D-C was homogeneously distributed with even coverage on the str...Show More

Boron Nitride Coated Three-Dimensional Graphene as an Electrically Insulating Electromagnetic Interference Shield

Zhi Lin Ngoh;Fei Ni Leong;Roland Yingjie Tay;Matthew David Whiteside;Soon Siang Chng;Jong Jen Yu;Siu Hon Tsang;Dunlin Tan;Geok Ing Ng;Edwin Hang Tong Teo

2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

Year: 2019 | Conference Paper |

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

K. Ranjan;S. Arulkumaran;G. I. Ng;A. Sandupatla

IEEE Journal of the Electron Devices Society

Year: 2019 | Volume: 7 | Journal Article |

Cited by: Papers (27)

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We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self-heating induced device performances were extracted at different values drain bias voltage (VD) and dissipated DC power density (PD) in continuous wave (CW) operating condition. The effect of self-heating was observed much lesser ...Show More

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

K. Ranjan;S. Arulkumaran;G. I. Ng;A. Sandupatla

IEEE Journal of the Electron Devices Society

Year: 2019 | Volume: 7 | Journal Article |

GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer

Zhihong Liu;Hanlin Xie;Kwang Hong Lee;Chuan Seng Tan;Geok Ing Ng;Eugene A. Fitzgerald

2019 Symposium on VLSI Technology

Year: 2019 | Conference Paper |

Cited by: Papers (3)

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GaN-on-Si has revealed its great potential for next-generation power electronics applications, however, there remains a challenge in increasing the breakdown voltage (BVoff) due to the limit of the GaN epilayer thickness on large size wafers. In this work we propose a GaN-on-Insulator (GNOI)-on-Si structure to address this issue. A 200 mm GNOI-on-Si wafer was prepared through removing the original...Show More

GaN HEMTs with Breakdown Voltage of 2200 V Realized on a 200 mm GaN-on-Insulator(GNOI)-on-Si Wafer

Zhihong Liu;Hanlin Xie;Kwang Hong Lee;Chuan Seng Tan;Geok Ing Ng;Eugene A. Fitzgerald

2019 Symposium on VLSI Technology

Year: 2019 | Conference Paper |

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

S. Abhinay;S. Arulkumaran;G.I. Ng;K. Ranjan;M. Deki;S. Nitta;Y. Honda;H. Amano

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

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Effect of drift layer thicknesses (DLT) (2, 15 and $30 \mu m)$ in reverse current conduction mechanisms of vertical GaN-on-GaN Schottky Barrier Diodes grown MOCVD has been investigated for the first time. The conduction mechanism is changing from thermionic field emission (TFE) to thermionic emission (TE) when the DLT of GaN increases. The SBDs with DLT of $2 \mu m$ and $30 \mu m$ exhibit TFE thro...Show More

Effects of Drift Layer Thicknesses in Reverse Conduction Mechanism on Vertical GaN-on-GaN SBDs grown by MOCVD

S. Abhinay;S. Arulkumaran;G.I. Ng;K. Ranjan;M. Deki;S. Nitta;Y. Honda;H. Amano

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

RF and Power GaN HEMTs on 200 mm-Diameter 725 μm-Thick p-Si Substrates

Zhihong Liu;Weichuan Xing;Geok Ing Ng;Eugene A. Fitzgerald

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

Cited by: Papers (2)

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One effective approach to reduce the cost of GaN devices is to use 200 mm-diameter and 725 μm-thick p-Si substrates. We demonstrated RF and power GaN-on-Si HEMTs on small pieces of samples from 200 mm wafers using Au-contained process. fT/fmax of 36/33 GHz were achieved in 0.25 μm gate RF devices and breakdown voltage (BVoff)>1200V was achieved in power devices. 200 mm wafers were fabricated using...Show More

RF and Power GaN HEMTs on 200 mm-Diameter 725 μm-Thick p-Si Substrates

Zhihong Liu;Weichuan Xing;Geok Ing Ng;Eugene A. Fitzgerald

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure

M. Whiteside;G. I. Ng;S. Arulkumaran;K. Ranjan;Y. Dikme

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

Cited by: Papers (2)

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AlGaN/GaN metal-insulator-semiconductor (MIS) diodes have been demonstrated using low temperature epitaxy (LTE) AlN grown at 200°C as a dielectric for the first time. The MIS-diodes exhibited 3 orders of magnitude lower gate leakage current compared to conventional Schottky diodes. The interface state density (Dit) was estimated using the conductance-frequency method (CF) at a minimum value of 2.6...Show More

Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure

M. Whiteside;G. I. Ng;S. Arulkumaran;K. Ranjan;Y. Dikme

2019 Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2019 | Conference Paper |

The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow

Chieh-Chih Huang;Zhihong Liu;Weichuan Xing;Geok Ing Ng;Eugene A Fitzgerald;Soo Jin Chua

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2018 | Conference Paper |

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GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The s...Show More

The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow

Chieh-Chih Huang;Zhihong Liu;Weichuan Xing;Geok Ing Ng;Eugene A Fitzgerald;Soo Jin Chua

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

Year: 2018 | Conference Paper |

Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Wanjun Wang;Mohamed Saïd Rouifed;Chongyang Liu;Jiaxu Sia;Jin Zhou;Callum G. Littlejohns;Milos Nedeljkovic;Graham T. Reed;Hong Wang

IEEE Photonics Journal

Year: 2018 | Volume: 10, Issue: 3 | Journal Article |

Cited by: Papers (6)

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Thermally tunable Fano and electromagnetically induced transparency (EIT) resonances are theoretically and experimentally demonstrated based on a Mach-Zehnder interferometer assisted Bragg grating-microring coupled resonant system on silicon-on-insulator (SOI) platform. In this paper, the destructive and constructive coupling between the two resonators, the microring resonator and the Fabry-Perot ...Show More

Experimental Demonstration of Thermally Tunable Fano and EIT Resonances in Coupled Resonant System on SOI Platform

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Wanjun Wang;Mohamed Saïd Rouifed;Chongyang Liu;Jiaxu Sia;Jin Zhou;Callum G. Littlejohns;Milos Nedeljkovic;Graham T. Reed;Hong Wang

IEEE Photonics Journal

Year: 2018 | Volume: 10, Issue: 3 | Journal Article |

Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

Weichuan Xing;Zhihong Liu;Kumud Ranjan;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 7 | Journal Article |

Cited by: Papers (29)

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In this work, a 100 nm-gate Al2O3/InAlN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) with a planar nanostrip-channel was fabricated on a Si substrate and its DC, small-signal RF and two-tone intermodulation characteristics were measured. The use of a planar nanostrip-channel and MIS structure allows these devices to have close to 10 dB better intermodulation distor...Show More

Planar Nanostrip-Channel Al2O3/InAlN/GaN MISHEMTs on Si With Improved Linearity

Weichuan Xing;Zhihong Liu;Kumud Ranjan;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 7 | Journal Article |

Mid-Infrared Sensor Based on a Suspended Microracetrack Resonator With Lateral Subwavelength-Grating Metamaterial Cladding

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Wanjun Wang;Mohamed S. Rouifed;Chongyang Liu;Jiaxu Sia;Jin Zhou;Callum G. Littlejohns;Graham T. Reed;Hong Wang

IEEE Photonics Journal

Year: 2018 | Volume: 10, Issue: 2 | Journal Article |

Cited by: Papers (11)

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A mid-infrared (MIR) biochemical sensor based on a one-time Si etching suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding is theoretically and experimentally demonstrated on a commercial 340-nm-thick-top-silicon silicon-on-insulator platform. The suspended structure offers an increased interaction area between the mode field and the chemicals under investig...Show More

Mid-Infrared Sensor Based on a Suspended Microracetrack Resonator With Lateral Subwavelength-Grating Metamaterial Cladding

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Wanjun Wang;Mohamed S. Rouifed;Chongyang Liu;Jiaxu Sia;Jin Zhou;Callum G. Littlejohns;Graham T. Reed;Hong Wang

IEEE Photonics Journal

Year: 2018 | Volume: 10, Issue: 2 | Journal Article |

InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Weichuan Xing;Zhihong Liu;Haodong Qiu;Kumud Ranjan;Yu Gao;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 1 | Journal Article |

Cited by: Papers (74)

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In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconductance (gm) of 438 mS/mm, and a high current gain cutoff frequency (fT) of 250 GHz. To the best of our ...Show More

InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

Weichuan Xing;Zhihong Liu;Haodong Qiu;Kumud Ranjan;Yu Gao;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2018 | Volume: 39, Issue: 1 | Journal Article |

Dual-band optical filter based on a single microring resonator embedded with nanoholes

Zecen Zhang;Geok Ing Ng;Haodong Qiu;Xin Guo;Mohamed Saïd Rouifed;Chongyang Liu;Hong Wang

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

Year: 2017 | Conference Paper |

Cited by: Papers (2)

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A dual-band optical filter based on a single microring resonator embedded with nanoholes is theoretically and experimentally demonstrated for the first time. A numerical model based on transfer matrix method is utilized to simulate the performance of this device. The coupling between the microring resonator and the Fabry-Pérot resonator formed by nanoholes gives rise to the dual-band optical filte...Show More

Dual-band optical filter based on a single microring resonator embedded with nanoholes

Zecen Zhang;Geok Ing Ng;Haodong Qiu;Xin Guo;Mohamed Saïd Rouifed;Chongyang Liu;Hong Wang

2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

Year: 2017 | Conference Paper |

The switchable EIT-like and Fano Resonances in microring-Bragg grating based coupling resonant system

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Mohamed Saïd Rouifed;Chongyang Liu;Hong Wang

2017 Conference on Lasers and Electro-Optics (CLEO)

Year: 2017 | Conference Paper |

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A microring-Bragg grating based coupling resonant system is experimentally demonstrated to generate switchable EIT-like and Fano transmissions for the first time. The resonance state is dependent on the relation between coupling coefficient and round-trip-intensity-attenuation.Show More

The switchable EIT-like and Fano Resonances in microring-Bragg grating based coupling resonant system

Zecen Zhang;Geok Ing Ng;Ting Hu;Haodong Qiu;Xin Guo;Mohamed Saïd Rouifed;Chongyang Liu;Hong Wang

2017 Conference on Lasers and Electro-Optics (CLEO)

Year: 2017 | Conference Paper |

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

Weichuan Xing;Zhihong Liu;Haodong Qiu;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 5 | Journal Article |

Cited by: Papers (37)

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In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance gm and cutoff frequency fT linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in the channel under the gate. Devices with a gate length (Lg) of 80 nm and a source-to-drain distance (Lsd) of 1 μm were fabricate...Show More

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

Weichuan Xing;Zhihong Liu;Haodong Qiu;Geok Ing Ng;Tomás Palacios

IEEE Electron Device Letters

Year: 2017 | Volume: 38, Issue: 5 | Journal Article |

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

Yang Li;Geok Ing Ng;Subramaniam Arulkumaran;Chandra Mohan Manoj Kumar;Kian Siong Ang;Zhi Hong Liu

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

Year: 2016 | Conference Paper |

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We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I–V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I–V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. C...Show More

AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

Yang Li;Geok Ing Ng;Subramaniam Arulkumaran;Chandra Mohan Manoj Kumar;Kian Siong Ang;Zhi Hong Liu

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

Year: 2016 | Conference Paper |

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Binit Syamal;Xing Zhou;Siau Ben Chiah;Anand M. Jesudas;Subramaniam Arulkumaran;Geok Ing Ng

IEEE Transactions on Electron Devices

Year: 2016 | Volume: 63, Issue: 4 | Journal Article |

Cited by: Papers (35)

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A comprehensive scalable trap-charge model for the dc and pulsed I-V modeling of GaN high electron-mobility transistor is presented. While interface traps are considered for dc I-V modeling, surface states and traps in the AlGaN barrier and GaN buffer are considered for the pulsed I-V model. A surface-potential-based model is presented for interface traps, which is then adapted to the current mode...Show More

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Binit Syamal;Xing Zhou;Siau Ben Chiah;Anand M. Jesudas;Subramaniam Arulkumaran;Geok Ing Ng

IEEE Transactions on Electron Devices

Year: 2016 | Volume: 63, Issue: 4 | Journal Article |

Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

S. Arulkumaran;G. I. Ng

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

Year: 2015 | Conference Paper |

Cited by: Papers (3)

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A stress engineered nano-channel (NC) In0.17Al0.83N/GaN T-gate Fin-High-Electron-Mobility Transistor (Fin-HEMT) exhibited a very high IDmax of >3900 mA/mm, a highest gm of >1410 mS/mm and Vth of -3.31 V at VD= 6V with good pinch-off characteristics. This dramatic increase of ID, gm and extracted electron velocity (νe) of 6.0×107 cm/s in the In0.17Al0.83N/GaN NC Fin-HEMT is due to the tensile stres...Show More

Nano-channel InAlN/GaN Fin-HEMTs for ultra-high-speed electronics

S. Arulkumaran;G. I. Ng

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

Year: 2015 | Conference Paper |

In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

S. Arulkumaran;G. I. Ng;C. M. Manojkumar;K. Ranjan;K. L. Teo;O. F. Shoron;S. Rajan;S. B. Dolmanan;S. Tripathy

2014 IEEE International Electron Devices Meeting

Year: 2014 | Conference Paper |

Cited by: Papers (8)

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We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 µA/mm, ION/IOFF∼106, SS=82 mV/dec at VD=0.5V were achieved. In addition, the Fin-HEMT also...Show More

In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

S. Arulkumaran;G. I. Ng;C. M. Manojkumar;K. Ranjan;K. L. Teo;O. F. Shoron;S. Rajan;S. B. Dolmanan;S. Tripathy

2014 IEEE International Electron Devices Meeting

Year: 2014 | Conference Paper |

Improved microwave noise performance in 0.15μm AlGaN/AlN/GaN HEMTs on silicon

G. I. Ng;S. Arulkumaran;K. Ranjan;S. Vicknesh

2014 9th European Microwave Integrated Circuit Conference

Year: 2014 | Conference Paper |

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High-frequency microwave noise performances (2 GHz to 19 GHz) were investigated on AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) with 0.15 μm T-gate fabricated on high resistivity 4-inch Silicon. The HEMTs exhibited maximum drain current density (IDmax) of 830 mA/mm, maximum extrinsic transconductance (gmmax) of 353 mS/mm, unity current cut-off frequency (fT) of 65 GHz and maximum oscil...Show More

Improved microwave noise performance in 0.15μm AlGaN/AlN/GaN HEMTs on silicon

G. I. Ng;S. Arulkumaran;K. Ranjan;S. Vicknesh

2014 9th European Microwave Integrated Circuit Conference

Year: 2014 | Conference Paper |

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