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Neuromorphic Coincidence Detector for Interaural Time Difference Encoding and Sound DOA Estimation
Eugénie Dalmas;François Danneville;Michael Bocquet;Christophe Loyez
Eight decades ago, the medial superior olive (MSO) responsible for the extraction of the interaural time difference (ITD) was described as a combination of coincidence detection neurons and delay lines by Jeffress, a model largely used in spiking sound source localization systems. Coincidence detection mechanisms are also found in the visual system to encode speed of motion and time delays as desc...Show More
Challenges to measure RF noise and intermodulation performances of mmW/THz devices
François Danneville;Haitham Ghanem;Joao Carlos Azevedo Gonçalves;Sylvie Lepilliez;Daniel Gloria;Guillaume Ducournau
2022 IEEE Latin American Electron Devices Conference (LAEDC)
Year: 2022 | Conference Paper |
Applications in millimetre wave range and terahertz frequencies keep on increasing. In this context, drastic challenges are faced at measurement level, in particular to extract noise performance and nonlinear properties of devices and circuits used to build the required systems. The aim of this talk is to provide an overview of these challenges, and to describe the solutions that we have developed...Show More
A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology
Victor Fiorese;Joao Carlos Azevedo Goncalves;Simon Bouvot;Emmanuel Dubois;Christophe Gaquiere;Guillaume Ducournau;François Danneville;Sylvie Lépilliet;Daniel Gloria
2021 16th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2022 | Conference Paper |
Cited by: Papers (3)
A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors i...Show More
SiGe Based LNA for Data Communication Applications at 211 GHz
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is impr...Show More
Subthreshold neuromorphic devices for Spiking Neural Networks applied to embedded A.I
Christophe Loyez;Kevin Carpentier;Ilias Sourikopoulos;François Danneville
2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)
Year: 2021 | Conference Paper |
Cited by: Papers (12)
Energy autonomy is one of the major challenges of embedded Artificial Intelligence. Among the candidate technologies likely to take up such a challenge, spiking neural networks are the most promising because of both their spatio-temporal and sparse representation of the information. In this context, this paper presents a neuromorphic approach based on an industrial CMOS technology and adopting an ...Show More
Sub-0.3V CMOS neuromorphic technology and its potential application
François Danneville;Kevin Carpentier;Ilias Sourikopoulos;Michel Paindavoine;Christophe Loyez
2021 International Conference on Content-Based Multimedia Indexing (CBMI)
Year: 2021 | Conference Paper |
Cited by: Papers (6)
The aim of this paper is to present a sub-0.3 V neuromorphic technology developed for spiking neural network design and its potential application. The main properties of the developed ultra low power (ULP) artificial neuron are first recalled. A description of ULP synapses follows that includes the plasticity scheme. The neuromorphic toolbox is then used to design a basic circuit allowing oriented...Show More
Non-linear analysis of a Broadband Power Amplifier at 300 GHz
Haitham Ghanem;Benjamin Schoch;Ingmar Kallfass;Pascal Szriftgiser;Malek Zegaoui;Mohammed Zaknoune;François Danneville;Guillaume Ducournau
2020 15th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2021 | Conference Paper |
In this article we present a new method to measure the third-order intercept point (IP3) of a 300 GHz medium power amplifier MMIC based on III-V technology in an on-wafer measurement setup. The extraction was carried out using a uni-travelling carrier photodiode as the input signal source. Taking advantage of the photo-mixing phenomena we were able to generate two input RF signals using the same s...Show More
Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS
Ousmane Magatte Kane;Luca Lucci;Pascal Scheiblin;Thierry Poiroux;Jean-Charles Barbé;François Danneville
2020 15th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2021 | Conference Paper |
Cited by: Papers (2)
Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very attractive for RF-mmW circuits thanks to the excellent reported RF figure of merits (FOMs). In this art...Show More
300-GHz Intermodulation/Noise Characterization Enabled by a Single THz Photonics Source
In this letter, we present the first use of a terahertz (THz) photonic-driven source toward active circuit characterization. We show that a single source can be used for intermodulation points and noise figure measurement. The method is applied at 300 GHz with a HEMT technology-based low noise amplifier (LNA). We show that the third and fifth intermodulation behavior at 300 GHz can be extracted ta...Show More
Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
H. Ghanem;João Carlos Azevedo Gonçalves;Pascal Chevalier;Issa Alaji;Walid Aouimeur;Sylvie Lepilliet;Daniel Gloria;Christophe Gaquière;François Danneville;G. Ducournau
In this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size. The noise source is based on a Schottky diode realized on the 55-nm SiGe BiCMOS technology from STMicroelectronics, Crolles, France. Due to the ability of being integrated on...Show More
RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology
Ousmane Kane;Luca Lucci;Pascal Scheiblin;Sylvie Lepilliet;François Danneville
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Year: 2019 | Conference Paper |
Cited by: Papers (6)
the drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits for millimeter wave applications. In this context, this paper presents the RF characterization (up to 50 GHz) of an advanced 22nm UTBB FDSOI technology developed by Globalfoundries. In addition to the DC performances wit...Show More
Silicon Based Diode Noise Source Scaling For Noise Measurement Up To 325 GHz
H. Ghanem;J-C. Azevedo-Gonçalves;S. Lépilliet;D. Gloria;C. Gaquière;F. Danneville;G. Ducournau
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Year: 2019 | Conference Paper |
Cited by: Papers (2)
In this article, we investigate the use of silicon-based diode for millimeter-wave noise generation. A test bench setup was characterized to perform broadband noise measurements up to 325 GHz. A noise receiver is assembled and its Noise Figure (NF) was extracted using cryogenic Hot/Cold measurements. A unitravelling carrier photodiode (UTC-PD) is used as a noise source and the Excess Noise Ratio (...Show More
Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils
Justine Philippe;Arun Bhaskar;Etienne Okada;Flavie Braud;Jean-François Robillard;François Danneville;Christine Raynaud;Daniel Gloria;Emmanuel Dubois
Thinned CMOS chips transfer-bonded onto a compliant host substrate remain to date the technology of choice for applications requiring both mechanical flexibility and high frequency operation. However, the use of poorly thermally conductive host substrates raises the problem of thermal management of flexible electronics, a topic poorly addressed in literature. In this letter, we report the analysis...Show More
22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance
Ousmane M. Kane;Luca Lucci;Pascal Scheiblin;Sylvie Lepilliet;François Danneville
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2019 | Conference Paper |
Cited by: Papers (8)
The drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits suitable for millimeter applications. In this context, this paper presents the RF and noise characterization (up to 110 GHz) of an advanced 22 nm UTBB FDSOI technology developed by Globalfoundries. In addition to the exc...Show More
Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz
João Carlos Azevedo Gonçalves;Haitham Ghanem;Simon Bouvot;Daniel Gloria;Sylvie Lépilliet;Guillaume Ducournau;Christophe Gaquière;François Danneville
This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source a...Show More
On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization
Joao Carlos Azevedo Goncalves;Issa Alaji;Daniel Gloria;Vincent Gidel;Frederic Gianesello;Sylvie Lepilliet;Guillaume Ducournau;Francois Danneville;Christophe Gaquiere
This paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. Th...Show More
On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization
Joao Carlos Azevedo Goncalves;Issa Alaji;Daniel Gloria;Vincent Gidel;Frederic Gianesello;Sylvie Lepilliet;Guillaume Ducournau;Francois Danneville;Christophe Gaquiere
Year: 2018 | Conference Paper |
Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz
Joao Carlos Azevedo Goncalves;Issa Alaji;Daniel Gloria;Sylvie Lepilliet;François Danneville;Christoohe Gaouierc;Guillaume Ducournau
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Year: 2018 | Conference Paper |
This paper describes millimeter wave (mmW) on-wafer continues wave (CW) power detection using dedicated high frequency diode junction, integrated on SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed for two test structures configurations in order to evaluate the potential of this diode junction for power detection as well as for sub-Terahertz Transmission Link on ...Show More
Ultra low power analog design and technology for artificial neurons
François Danneville;Ilias Sourikopoulos;Sara Hedayat;Christophe Loyez;Virgine Hoël;Alain Cappy
2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Year: 2017 | Conference Paper |
Cited by: Papers (8)
In a context of the end of Moore's law, energy dissipation constitutes a real challenge. Among the new energy efficient paradigms for data processing, bio-inspired computing is very promising, moreover introducing cognitive characteristics. As applications at very high scale are addressed, the size and energy dissipation of both the neuron and synapse cells needs to be minimized. In this context, ...Show More
A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
Simon Bouvot;Joao Carlos Azevedo Goncalves;Alice Bossuet;Thomas Quémerais;Sylvie Lépilliet;Guillaume Ducournau;François Danneville;Daniel Gloria
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2017 | Conference Paper |
Cited by: Papers (6)
A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance tuner. This active tunable circuit provides a reflection coefficient Γ > 0.5 and a S21 parameter bet...Show More
Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction
F. Danneville;M. Deng;S. Bouvot;J. Azevedo Goncalves;S. Lépilliet;G. Ducournau;C. Gaquière;G. Dambrine;A. Bossuet;T. Quémerais;G. E. Lauga-Larroze;J-M Fournier;P. Chevalier;D. Gloria
2017 International Conference on Noise and Fluctuations (ICNF)
Year: 2017 | Conference Paper |
Cited by: Papers (1)
In this paper, an in-situ extraction of the four noise parameters (NFmin, Rn, Γopt) of SiGe HBTs in mmW range (D-Band, 130-170 GHz) is described. Because an external mechanical tuner features high losses in such frequency mmW range, the first idea was to integrate an in-situ tuner directly on the silicon wafer. The concept was then extended in order to integrate more elements on silicon. In a firs...Show More
Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction
F. Danneville;M. Deng;S. Bouvot;J. Azevedo Goncalves;S. Lépilliet;G. Ducournau;C. Gaquière;G. Dambrine;A. Bossuet;T. Quémerais;G. E. Lauga-Larroze;J-M Fournier;P. Chevalier;D. Gloria
Year: 2017 | Conference Paper |
Experimental investigation of stochastic resonance in a 65nm CMOS artificial neuron
Sara Hedayat;Ilias Sourikopoulos;Christophe Loyez;Francois Danneville;Laurent Clavier;Virginie Hoel;Alain Cappy
2017 International Conference on Noise and Fluctuations (ICNF)
Year: 2017 | Conference Paper |
This work proposes an experimental demonstration of the stochastic resonance, a phenomenon widely observed in biology using a 65 nm CMOS artificial neuron. The stochastic resonance has been revealed through two different statistical studies. Moreover, when optimal, a signal to noise ratio at the output of the artificial neuron of 22.4 dB is achieved, for an ultra low power consumption, lower than ...Show More
A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
Joao Carlos Azevedo Goncalves;Thomas Quemerais;Daniel Gloria;Gregory Avenier;Sylvie Lepilliet;Guillaume Ducournau;Christophe Gaquière;François Danneville
2017 International Conference of Microelectronic Test Structures (ICMTS)
Year: 2017 | Conference Paper |
Cited by: Papers (7)
In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to −6 V. When biased around this breakdown voltage (their anode is grounded), an adjustable Excess Noise Ratio, ranging between 4 dB to 20 dB, was ach...Show More
A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
Joao Carlos Azevedo Goncalves;Thomas Quemerais;Daniel Gloria;Gregory Avenier;Sylvie Lepilliet;Guillaume Ducournau;Christophe Gaquière;François Danneville
Year: 2017 | Conference Paper |
A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm
Simon Bouvot;Thomas Quémerais;Joao Carlos Azevedo Goncalves;Sylvie Lépilliet;Guillaume Ducournau;François Danneville;Daniel Gloria
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Year: 2017 | Conference Paper |
Cited by: Papers (5)
A millimeter-wave (mmW) frequency passive mixer for in-situ noise characterization in 110–170 GHz (D-band) is demonstrated using STMicroelectronics BiCMOS 55 nm technology. The circuit uses a gate-pumped MOS transistor with transmission lines filters, without any IF amplifier, allowing a direct noise characterization. This mixer is designed as a frequency down-converter, from D-band frequency to 1...Show More
A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm
Simon Bouvot;Alice Bossuet;Thomas Quemerais;Guillaume Ducournau;François Danneville;Estelle Lauga-Larroze;Daniel Gloria;Jean-Michel Fournier;Christophe Gaquiere
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Year: 2017 | Conference Paper |
Cited by: Papers (9)
A digitally controlled, 64 states tuner, for D-band in-situ noise and power characterization is demonstrated on the STMicroelectronics BiCMOS 55 nm technology. This tuner is composed of a high impedance series transmission line loaded periodically by degenerated MOS transistors operating in OFF and ON states as variable impedance device. The circuit is using traveling-wave and distributed effects ...Show More
Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding
E. Dubois;J. Philippe;M. Berthomé;J.F. Robillard;C. Gaquière;F. Danneville;D. Gloria;C. Raynaud
2016 6th Electronic System-Integration Technology Conference (ESTC)
Year: 2016 | Conference Paper |
Cited by: Papers (2)
Based on a simple process referred to as ultimate-thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the compl...Show More
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