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R. M. Shagaliev - IEEE Xplore Author Profile

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R. M. Shagaliev

Publications

1

Citations

0

Publications by Year

20012001

Co-Authors:

A. S. BoriskinV. A. DemidovV. S. DrozhinA. V. IvanovskyV. I. Karelin

Show All Co-Authors (15)

R. M. Shagaliev

Affiliation

Russian Federal Nuclear Center, Russia

Publication Topics

Capillary,
Semi-empirical Model,
Soft Radiation,
Soft X-ray Radiation,
Thin Model,
Type Of Discharge,
X-ray Irradiation

Publications

1

Citations

0

Publications by Year

20012001

Co-Authors:

A. S. Boriskin
V. A. Demidov
V. S. Drozhin
A. V. Ivanovsky
V. I. Karelin

Show All Co-Authors (15)

Author's Published Works

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Conferences (1)

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C.H. Yu(1)
M.F. Chen(1)
M.H. Tseng(1)
C.W. Hsiao(1)
W.J. Wu(1)
Integrated Interconnect and Packaging Division Research and Development, Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan(1)
2009 IEEE International Electron Devices Meeting (IEDM)(1)
IEEE(1)
Baltimore, MD, USA(1)
Etching(1)
Thin Processes(1)

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Enabling 3D-IC foundry technologies for 28 nm node and beyond: through-silicon-via integration with high throughput die-to-wafer stacking

D.Y. Chen;W.C. Chiou;M.F. Chen;T.D. Wang;K.M. Ching;H.J. Tu;W.J. Wu;C.L. Yu;K.F. Yang;H.B. Chang;M.H. Tseng;C.W. Hsiao;Y.J. Lu;H.P. Hu;Y.C. Lin;C.S. Hsu;Winston S. Shue;C.H. Yu

2009 IEEE International Electron Devices Meeting (IEDM)

Year: 2009 | Conference Paper |

Cited by: Papers (44) | Patents (2)

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High density through-silicon-via (TSV) and cost-effective 3D die-to-wafer integration scheme are proposed as best-in-class foundry solutions for high-end CMOS chips at 28 nm node and beyond. Key processes include: TSV formation, extreme thinning of the TSV wafer and die-to-wafer assembly. The impact of extreme thinning on device threshold voltage, leakage currents, and Ion-Ioff characteristics of ...Show More

Enabling 3D-IC foundry technologies for 28 nm node and beyond: through-silicon-via integration with high throughput die-to-wafer stacking

D.Y. Chen;W.C. Chiou;M.F. Chen;T.D. Wang;K.M. Ching;H.J. Tu;W.J. Wu;C.L. Yu;K.F. Yang;H.B. Chang;M.H. Tseng;C.W. Hsiao;Y.J. Lu;H.P. Hu;Y.C. Lin;C.S. Hsu;Winston S. Shue;C.H. Yu

2009 IEEE International Electron Devices Meeting (IEDM)

Year: 2009 | Conference Paper |

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