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High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure
Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper...Show More
Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes
Qunying Zeng;Yijie Fan;Yangbin Zhu;Tailiang Guo;Hailong Hu;Fushan Li
Electrohydrodynamic (EHD) printing is a promising method for manufacturing high-resolution quantum dot light-emitting diodes (QLEDs). The stability of the EHD printing process and the morphology of final quantum dot (QD) film are highly dependent on the ink formulation. To solve this problem, we selected a ternary solvent (decahydronaphthalene, tetradecane and nonane) ink for cadmium-based QDs (Cd...Show More
V₂O₅-Based Dual-Hole-Injection Layers Toward Efficient and Stable Quantum Dot Light-Emitting Diodes
Quantum dot light-emitting diodes (QLEDs) are one of the promising candidates for next-generation displays due to their outstanding color purity and tunability, device efficiency, and solution-processing compatibility. However, the commonly used hole injection layer (HIL) of polyethylene dioxythiophene:polystyrene sulfonate (PEDOT:PSS) raises concerns about inferior device stability and efficiency...Show More
Enhancing the Performance of Light-Emitting Electrochemical Cells by Incorporating Quantum Dots
Tuo Wu;Qunying Zeng;Yangbin Zhu;Haomin Chen;Guogang Shan;Tailiang Guo;Hailong Hu;Fushan Li
Light-emitting electrochemical cells (LECs) are one of the most promising technologies for solid-sate lighting and display. We present a hybrid device concept for achieving higher performance by combining red colloidal quantum dots (QDs) and Ir-based ionic transition metal complex (iTMC). The utilized QDs exhibit a core–shell structure of CdSe/ZnS. By this method, the resultant devices exhibit a m...Show More
Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer
Haomin Chen;Qunying Zeng;Yangbin Zhu;Tuo Wu;Yijie Fan;Tailiang Guo;Hailong Hu;Fushan Li
Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability. However, because ZnO has higher electron mobility than organic hole transport materials, the carrier transport is unbalanced. In addition, ZnO NPs has many surface defects, which is ea...Show More
Operating Mechanism of Quantum-Dot Light-Emitting Diodes Under Alternating Current-Drive
Shanhong Lv;Kaiyu Yang;Chaoxing Wu;Kun Wang;Rong Chen;Xiang Chen;Songman Ju;Zhiqi Luo;Haobing Zhao;Tailiang Guo;Fushan Li
IEEE Electron Device Letters
Cited by: Papers (4)
Nowadays, direct current-drive (DC-drive) is the mainstream method of driving electroluminescence (EL) devices such as quantum-dot light-emitting diodes (QLEDs). In contrast, alternating current-drive (AC-drive), as an alternative to DC-drive, has achieved lots of significant research results in recent years. And AC-drive is expected to reduce equipment manufacturing costs by reducing the use of p...Show More
E-Synapse Based on Lead-Free Organic Halide Perovskite (CH3NH3)3Sb2Cl9 for Neuromorphic Computing
Ziquan Ni;Yangbin Zhu;Songman Ju;Zhongwei Xu;Fengqing Tian;Hailong Hu;Tailiang Guo;Fushan Li
Memristors based on organic-inorganic halide perovskite have received intensive attention because of its solution-processability and defect-tolerant characteristics. But the lead element in perovskite is inevitably harmful to human body and environment. Herein, we report an e-synapse based on lead-free organic halide perovskite (CH3NH3)3Sb2Cl9 (MA3Sb2Cl9), which exhibits excellent mimic of biologi...Show More
Intelligent Commodity Settlement System based on Embedded Equipment and Convolutional Neural Network
2020 International Conference on Communications, Information System and Computer Engineering (CISCE)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
The rapid development of deep neural networks makes unmanned supermarket solutions based on computer vision possible. However, the computational complexity of convolutional neural networks is much higher than traditional algorithms, and the limitations of limited resources on embedded devices cannot meet real-time requirements. This article proposes an intelligent commodity settlement system based...Show More
Achieving Highly Efficient and Stable Quantum Dot Light-Emitting Diodes With Interface Modification
Fengqing Tian;Yangbin Zhu;Zhongwei Xu;Baoyu Li;Xiaojing Zheng;Ziquan Ni;Hailong Hu;Ying Chen;Jinyong Zhuang;Longjia Wu;Dong Fu;Xiaolin Yan;Fushan Li
IEEE Electron Device Letters
Cited by: Papers (11)
In conventional quantum dot light-emitting diodes (QLEDs), the organic charge transport materials are susceptible to erosion by water and oxygen, which would reduce the efficiency and lifetime of the devices. Herein, we modified the surface of the organic hole transport layer with an ultra-thin Al2O3 layer, which is deposited by using atomic layer deposition technique, to obtain the highly efficie...Show More
Highly Reliable Electronic Synapse Based on Au@Al2O3 Core-Shell Nanoparticles for Neuromorphic Applications
Fumin Ma;Zhongwei Xu;Yang Liu;Yueting Zheng;Wei Chen;Hailong Hu;Tailiang Guo;Fushan Li;Chaoxing Wu;Tae Whan Kim
IEEE Electron Device Letters
Cited by: Papers (8)
Simulating synaptic function and building brain-inspired computers have received widespread attention. The memristor is considered to be an electronic version of the synapse and an excellent element for creating a brand-new artificial intelligence system in the future. However, most memristor-based electronic synapses currently exhibit low stability due to complex resistance switching processes. B...Show More
Flexible Memristive Device Based on WSe2 Quantum Dots Sandwiched Between Two Poly (Methyl Methacrylate) Layers
Chandrasekar Perumalveeramalai;Fushan Li;Tailiang Guo;Tae Whan Kim
IEEE Electron Device Letters
Cited by: Papers (10)
In this letter, we demonstrate the fabrication of flexible memristive devices using tungsten di-selenide (WSe2) quantum dots (QDs) as the active layer. The WSe2 QDs were synthesized by facile two-step technique consisting of solvothermal and sonication processes to utilize the charge-trapping sites in the memristive devices. The sizes of as-synthesized WSe2 QDs, as determined from the transmission...Show More
Efficient Hole Injection of MoOx-Doped Organic Layer for Printable Red Quantum Dot Light-Emitting Diodes
Yangbin Zhu;Hailong Hu;Yang Liu;Xiaojing Zheng;Songman Ju;Wanzhen Lin;Tailiang Guo;Fushan Li
IEEE Electron Device Letters
Cited by: Papers (12)
In this letter, we report the high-performance quantum dot light-emitting diodes (QLEDs) with a hybrid hole injection layer (HIL) by doping MoOx into poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS). By this method, the Fermi level of HIL increases from 4.9 to 5.3 eV, allowing better energy level matching and more efficient hole injection capability. The resultant devices exhi...Show More
Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
IEEE Electron Device Letters
Cited by: Papers (14)
Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are repro...Show More
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