Author details
Chang-Hyun Kim
Also published under: Chang Hyun Kim, Chang-hyun Kim
Affiliation
Department of Magnetic Levitation and Linear Drive
Korea Institute of Machinery and Materials
Yuseong-Gu, Daejeon, South Korea
Biography
Chang-Hyun Kim (S'82–M'95) received the B.S. and M.S. degrees in electronics engineering from Seoul National University, Seoul, Korea, in 1982 and 1984, respectively, and the Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor, in 1994.,In 1984, he joined Samsung Electronics Company, Ltd., Kyungki-do, Korea, where he has been involved in circuit design for high-speed dynamic RAMs, ranging from 64 kb to 16 Mb in size. From 1989 until 1994, he was a Research Assistant with the Center for Integrated Sensors and Circuits, University of Michigan. His present research interests are in the area of circuit design for low-voltage and high-performance gigascale DRAMs and future DRAM architectures.,Dr. Kim received the Gr... Author's Published Works