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Sub-terahertz slow-wave circuits for coherent radiation sources
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sang Hun Lee;Jun Hee Choi;Sunil Kim;Jong Min Kim;Sungwoo Hwang;So-Yeon Jeon;SeGi Yu;George Collins;M. E. Read;R. Lawrence Ives
2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC)
Year: 2016 | Conference Paper |
In this letter, we propose sub-terahertz (sub-THz) slow-wave circuits for coherent radiation sources through beam-wave interaction mechanism. The circuits are prepared using microfabrication in advanced silicon (Si) technologies. Our approach is to split the circuit into multi levels allowing a low aspect ratio configuration and alleviating the loading effect of deep-reactive-ion etching on silico...Show More
Enhanced RF performance in multi-tunnel backward-wave oscillators
Chan-Wook Baik;Yongsung Kim;Ho Young Ahn;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Kyung-Sang Cho;Sunil Kim;R. Lawrence Ives;Jong Min Kim;Sungwoo Hwang
IEEE International Vacuum Electronics Conference
Year: 2014 | Conference Paper |
Cited by: Papers (1)
We propose an efficient beam-wave interaction circuit employing a multi-tunnel, slow-wave structure for W-band backward-wave oscillators. The tunnel is disposed one of above and below the beam tunnel, which enhances RF characteristics. The interaction circuit is prepared using a deep-reactive ion etched (DRIE), multi-level microfabrication on silicon wafers. The return loss shows strong resonances...Show More
A fully integrated MEMS tera hertz interaction circuit with multi wafer packaging
Yongsung Kim;Jooho Lee;Chan-Wook Baik;Ho Young Ahn;Seogwoo Hong;Sang-Hun Lee;Chang-Yul Moon
This paper presents a fully integrated MEMS THz interaction circuit implemented by multiple bonding of bulk micromachined silicon wafers. A metal to metal eutectic bonding scheme was optimized for attaching four wafers and a parylene was adopted as etch stop during silicon penetration process without any charging effect and poor step coverage on entire wafer. `Silicon sidewall smoothing' process w...Show More
Experimental measurement of W-band backward-wave amplification driven by external pulsed signals
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Sanghun Lee;Junhee Choi;Sunil Kim;George A. Collins;Lawrence Ives;Sungwoo Hwang
2013 IEEE 14th International Vacuum Electronics Conference (IVEC)
Year: 2013 | Conference Paper |
Cited by: Papers (2)
The experimental implementation of W-band backward-wave oscillator is achieved by using a multilevel microfabrication of interaction circuit including beam tunnel, slow-wave structure, and output transition, on deep reactive ion etched (DRIE) and metal deposited silicon wafers. The interaction circuit shows precise accuracy in full 3 dimensions, and the return loss measurement agrees well with HFS...Show More
Observation of backward-wave oscillations in silicon-MEMS beam-wave interaction circuits at 0.1 THz
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Junhee Choi;Sunil Kim;Byoung Lyong Choi;George A. Collins;Lawrence Ives;Sungwoo Hwang
2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves
Year: 2012 | Conference Paper |
Cited by: Papers (1)
We report a W-band backward-wave oscillator using micro-fabrication technologies by which a fully 3-dimensional slow-wave interaction circuit is successfully employed on multi-bonded silicon wafers. MEMS (micro-electromechanical systems) technologies such as deep RIE (reactive ion etching) and thermocompressive hermetic bonding are applied to achieve highly accurate dimensional structures for high...Show More
Development of W-band backward-wave oscillator
Chan-Wook Baik;Ho Young Ahn;Yongsung Kim;Jooho Lee;Seogwoo Hong;Junhee Choi;Sunil Kim;George A. Collins;Lawrence Ives;Jongmin Kim
The precise patterning of periodic slow-wave structures can be successfully accomplished by modern photolithography technology on flat substrates in high frequency regime (>100 GHz). When the aspect ratio of the structure between in-plane and out-of-plane dimensions becomes higher than unity, however, controlled MEMS (micro-electromechanical systems) technologies are strongly required to achieve a...Show More
Return loss measurement of a microfabricated slow-wave structure for backward-wave oscillation
Chan-Wook Baik;So Yeon Jun;Ho Young Ahn;Seogwoo Hong;Joo Ho Lee;Yongsung Kim;Sang Hun Lee;SeGi Yu;Jong-Min Kim
35th International Conference on Infrared, Millimeter, and Terahertz Waves
Year: 2010 | Conference Paper |
Cited by: Papers (3)
Precise measurement on the RF return loss was performed for a microfabricated slow-wave structure. The interaction circuit was designed to operate at 100 GHz of W-band frequency. A deep reactive ion etching (DRIE) showed a good side-wall profile but inaccurately curved bottom surface. The result represents that the etch rate was strongly dependent on the mask-opening area, which caused a frequency...Show More
MEMS applied backward-wave oscillator for 0.1 THz
Chan-Wook Baik;Sun Il Kim;Seogwoo Hong;SangHun Lee;Anurag Srivastava;Jin-Kyu So;Gun-Sik Park;Jong-Min Kim
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves
Year: 2009 | Conference Paper |
Cited by: Papers (1)
The microfabrication of a backward-wave oscillator is presented for a compact, high-power source in the terahertz range of electromagnetic spectrum. One of micro-electro-mechanical systems (MEMS) technologies, a deep reactive ion etching (DRIE), was employed and achieved the fully 3-dimensional accuracy of coupled cavities operating at 0.1 THz. The prediction and measurement on the scattering para...Show More
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