As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the p...Show More
A new sensing architecture aiming at negative threshold voltage detection for 3D NAND Flash memory cells is proposed. This sensing architecture does not need triple well devices and negative voltage supplies. In this architecture, we apply 2 V to source line (SL) rather than 0V which is always used in conventional method. We prove that this architecture is feasible by Technology Computer Aided Des...Show More