Author details
Mohamed Masmoudi
Also published under: M. Masmoudi
Affiliation
GPM
CNRS
Normandy University, IUT of Rouen, Rouen, France
Biography
Mohamed Masmoudi received the Ph.D. degree in materials science from the University of Rouen, in 1997. He joined LEMI / University of Rouen in 1998 and began work on the electrical characterization of semiconductors. He is now working in GPM (Groupe Physique des Matériaux, UMR CNRS 6634). He has carried out research on transistors and his current major research interests include microelectronic reliability on power transistors like silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFET SiC).(Based on document published on 30 March 2017). Author's Published Works