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Sub-THz On-Chip CPW Monopole on InP with Cross-shaped Slot for Bandwidth Enhancement
Andrzej Dudek;Abdullah Al-Khalidi;Krzysztof Wincza;Mahmoud Wagih
2024 18th European Conference on Antennas and Propagation (EuCAP)
Year: 2024 | Conference Paper |
THz communications call for highly integrated wireless chips. This paper presents the first, on-chip sub-THz coplanar waveguide (CPW)-fed monopole antenna covering the full J-band (220-330 GHz), on an Indium Phosphide (InP) substrate. The antenna is designed on a high-permittivity Indium Phosphide (InP) dielectric substrate with a single layer of metallization. Targeting multi-GBPS communication a...Show More
An Overview of the Role of Solid State Transformer in Extreme Fast Charging of Electric Vehicles
2023 14th International Renewable Energy Congress (IREC)
Year: 2023 | Conference Paper |
The traditional extreme fast charging (XFC) system of electric vehicle (EV) typically interfaces a centralized front-end converter (FEC) with the medium voltage grid using line frequency transformer (LFT). However, LFT has high volume, weight and power losses, as such cannot be used where space and environmental friendliness are of great concern. This paper presents a solid state transformer (SST)...Show More
Evaluation of DC Performance of Buffer-Free AlGaN/GaN HEMT on SiC Relative to the Thickness of AlN Nucleation Layer
Sahalu Hassan;Nasiru B. Kadandani;Kaivan Karami;Mahmud Dwidar;Edward Wasige;Abdullah Al-khalidi
2023 14th International Renewable Energy Congress (IREC)
Year: 2023 | Conference Paper |
Epitaxial layer engineering is fundamental to harnessing the benefits of gallium nitride (GaN) devices in power and high frequency applications. Various GaN epitaxial designs have been experimentally demonstrated. Recently, a buffer-free GaN-on-SiC epitaxial layer structure was introduced to improve the breakdown field and reduce parasitic parameters. Aluminium nitride (AlN) nucleation (NL) is com...Show More
Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications
Mahmud Dwidar;Afesomeh Ofiare;Edward Wasige;Abdullah Al-Khalidi
2023 18th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2023 | Conference Paper |
In this work, normally-off, aluminium nitride (AlN)/ gallium nitride (GaN) high electron mobility transistors (HEMTs) were successfully fabricated with T-gate structures. GaN HEMTs with A1N barriers and 70 nm T-gates exhibited +0.62V of threshold voltage ($\mathrm{V}_{\mathrm{t}\mathrm{h}}$), 1.15mV/V of drain induced barrier lowering (DIBL), and $\mathrm{f}_{\mathrm{T}}$/fmax of 89/232 GHz. This ...Show More
Very High-Power High-Frequency Resonant Tunnelling Diode Oscillators
A. Al-Khalidi;J. Wang;K. Alharbi;J. M. L. Figueiredo;E. Wasige
2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
We report on very high power resonant tunnelling diode (RTD) based monolithic microwave integrated circuit (MMIC) oscillators with 35 mW output power at 11 GHz and 10 mW at 49 GHz. The key to these high powers is the use of an epitaxial layer structure that give devices with large peak to valley voltage span ($\Delta$V) of 1.2 V and the use of large area devices to get large peak to valley current...Show More
This paper presents 22 Gbps wireless link over 80 cm distance by using high power J-band resonant tunnelling diode (RTD) transmitter (Tx). The RTD Tx fundamental frequency is 278 GHz with around 1 mW output power. The system energy efficiency can reach 0.1 pJ per cm distance. No frequency multiplier, power amplifier or synthesizer was employed, and fabrication process is fully compatible with low-...Show More
Towards an Excitable Microwave Spike Generator for Future Neuromorphic Computing
Qusay Al-Taai;Razvan Morariu;Jue Wang;Abdullah Al-Khalidi;Ali Al-Moathin;Bruno Romeira;José Figueiredo;Edward Wasige
2021 16th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2022 | Conference Paper |
Cited by: Papers (3)
This paper describes the systematic approach to develop low power consumption excitable neuromorphic spike generators using nano-sized resonant tunnelling diode (RTD), including fabrication, characterization and device modelling and spike circuit simulation. The fabrication process of nano sized RTDs has been developed and devices exhibit peak currents of up to 100 μA. The energy efficiency of the...Show More
Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review
Resonant tunneling diode (RTD) technology is emerging as one of the promising semiconductor-based solid-state technologies for terahertz (THz) wireless communications. This article provides a review of the state of the art, with a focus on the THz RTD oscillator, which is the key component of RTD-based THz transmitters and coherent receivers. A brief summary on the device principle of operation, t...Show More
1080P HD Video Transmission using RTD Transmitter
2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)
Year: 2021 | Conference Paper |
Cited by: Papers (2)
In this paper, we present low cost THz wireless transmission system utilizing 278GHz resonant tunneling diode (RTD) transmitter (Tx) with around ImW output power. The demonstration shows 12Gbps error free and 1080p30 (3Gbps) HD video real time transmission over 80 cm distance. These results demonstrate very promising future of RTD Tx for next generation wireless communication system.Show More
Resonant cavity assisted broadband CPW to rectangular waveguide transition on InP at 300 GHz
B. Hussain;J. Wang;A. Al-Khalidi;E. Wasige;H. M. Salgado;L. M. Pessoa
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
Year: 2021 | Conference Paper |
An in-plane resonant cavity-assisted coplanar waveguide (CPW) to rectangular waveguide (WG) transition is realized over an Indium Phosphide (InP) substrate with a thickness of 205 µm using a monopole radiating element. The simulated back-to-back (B2B) structure provides a bandwidth 16 GHz (288 - 304 GHz) with a return loss of 10 dB and insertion loss of 0.6 dB.Show More
Front end for D-band High Data Rate Point to Point links
Rupa Basu;Jeevan N. Rao;Rosa Letizia;Qiang Ni;Edward Wasige;Abdullah Al-Khalidi;Jue Wang;Claudio Paoloni
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Year: 2020 | Conference Paper |
A novel front end for high data rate point to point links at D-band (151 - 174.8 GHz) will provide up to 45 Gb/s over 1 km range. The low power signal generation is provided by a low cost Resonant Tunnelling Diode (RTD) oscillator. The RTD oscillator is connected to a Traveling Wave Tube that provides up to 10 W transmission power.Show More
Resonant Tunneling Diode Terahertz Sources With up to 1 mW Output Power in the J-Band
Abdullah Al-Khalidi;Khalid Hamed Alharbi;Jue Wang;Razvan Morariu;Liquan Wang;Ata Khalid;José M. L. Figueiredo;Edward Wasige
Terahertz (THz) oscillators based on resonant tunneling diodes (RTDs) have relatively low output power, tens to hundreds of microwatts. The conventional designs employ submicron-sized RTDs to reduce the device self-capacitance and, as a result, realize higher oscillation frequencies. However, reducing the RTD device size leads to lower output power. In this article, we present RTD oscillators that...Show More
Long range millimeter wave wireless links enabled by traveling wave tubes and resonant tunnelling diodes
Claudio Paoloni;Rupa Basu;Laxma R. Billa;Jeevan N. Rao;Rosa Letizia;Qiang Ni;Edward Wasige;Abdullah Al-Khalidi;Jue Wang
2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)
Year: 2019 | Conference Paper |
Cited by: Papers (4)
This paper describes a new project to realize a high data rate point to point wireless system above 150 GHz. The upper end of the D-band spectrum is used (151 -174 GHz) for full duplex transmission. The aims it to enable a full fiber on air with more than 1 km range to provide up to 45 Gb/s data rate. The system consists in a transmitter using a directly modulated Resonant Tunnelling Diode (RTD) o...Show More
Design, Fabrication and Characterisation of RTD Terahertz Oscillators
Jue Wang;Abdullah Al-Khalidi;Andrei Cornescu;Razvan Morariu;Afesomeh Ofiare;Edward Wasige
2019 European Microwave Conference in Central Europe (EuMCE)
Year: 2019 | Conference Paper |
This paper presents a monolithic microwave integrated circuit (MMIC) that combines two resonant tunneling diodes (RTDs) in parallel. By employing appropriate circuitry and improved device epilayer design, the oscillators generate an output power of 2 mW at 84 GHz and 1 mW at 206 GHz which are the highest power reported for RTD-based oscillators in the respective frequency bands. Also, preliminary ...Show More
Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz
Razvan Morariu;Jue Wang;Andrei Catalin Cornescu;Abdullah Al-Khalidi;Afesomeh Ofiare;José M. L. Figueiredo;Edward Wasige
This article presents a novel, on-wafer deembedding technique for the accurate small-signal equivalent circuit modeling of resonant tunneling diodes (RTDs). The approach is applicable to stabilized RTDs, and so enables the modeling of the negative differential resistance (NDR) region of the device's current-voltage (I-V) characteristics. Furthermore, a novel quasi-analytical procedure to determine...Show More
High-Efficiency Bias Stabilization for Resonant Tunneling Diode Oscillators
Andrei Catalin Cornescu;Razvan Morariu;Afesomeh Ofiare;Abdullah Al-Khalidi;Jue Wang;José M. L. Figueiredo;Edward Wasige
We report on high-efficiency, high-power, and low-phase-noise resonant tunneling diode (RTD) oscillators operating at around 30 GHz. By employing a bias stabilization network, which does not draw any direct current (dc), the oscillators exhibit over a tenfold improvement in the dc-to-RF conversion efficiency (of up to 14.7%) compared to conventional designs (~0.9%). The oscillators provide a high ...Show More
A Planar Distributed Channel AlGaN/GaN HEMT Technology
This brief presents AlGaN/GaN high electron mobility transistor (HEMT) devices with improved thermal and dc current-voltage (I-V) performance using a novel method of obtaining a distributed channel device, i.e., the total semiconductor area between the ohmic contacts comprise conducting and nonconducting regions. A novel oxygen (O2) plasma treatment technique is used to realize the inactive or non...Show More
15 Gbps Wireless Link Using W-band Resonant Tunnelling Diode Transmitter
Jue Wang;Abdullah Al-Khalidi;Razvan Morariu;Afesomeh Ofiare;Liquan Wang;Edward Wasige
2018 15th European Radar Conference (EuRAD)
Year: 2018 | Conference Paper |
A 15 Gbps wireless link over 50 cm distance is reported in this paper. A high power and low phase noise resonant tunneling diode (RTD) oscillator is employed as the transmitter. The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The measured phase noise value was -79 dBc/Hz at 100 KHz and -96 dBc/Hz at 1 MHz offset. The modulation scheme u...Show More
15 Gbps Wireless Link Using W-Band Resonant Tunnelling Diode Transmitter
Jue Wang;Abdullah Al-Khalidi;Razvan Morariu;I Afesomeh Ofiare;Liquan Wang;Edward Wasige
2018 48th European Microwave Conference (EuMC)
Year: 2018 | Conference Paper |
A 15 Gbps wireless link over 50 cm distance is reported in this paper. A high power and low phase noise resonant tunneling diode (RTD) oscillator is employed as the transmitter. The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The measured phase noise value was -79 dBc/Hz at 100 KHz and -96 dBc/Hz at 1 MHz offset. The modulation scheme u...Show More
AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance
2018 13th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2018 | Conference Paper |
Cited by: Papers (1)
This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 \mu \mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output pow...Show More
Compact J-band Oscillators With lm RF output Power and Over 110 GHz Modulation Bandwidth
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Year: 2018 | Conference Paper |
Cited by: Papers (5)
We report a compact resonant tunneling diode (RTD) oscillator with 1 mW output power at 260 GHz and a modulation bandwidth of over 110 GHz. The oscillator employs an RTD device size of 4 × 4 μm2 resonating with an 88 μm long microstrip inductor. The total chip size is 470 × 530 μm2. All fabrication was done using the low cost photolithography technique.Show More
This paper presents a compact, low power consumption and low cost resonant tunneling diode (RTD) based terahertz (THz) source technology for automotive radar applications. Large RTD sizes of 4×4 μm2 are manufactured using the low cost photolithography technology with a total chip size of 470×530 μm2. The measured oscillation frequency was 260 GHz and the oscillator exhibits a low power consumption...Show More
15-Gb/s 50-cm Wireless Link Using a High-Power Compact III–V 84-GHz Transmitter
Jue Wang;Abdullah Al-Khalidi;Liquan Wang;Razvan Morariu;Afesomeh Ofiare;Edward Wasige
This paper reports on a 15-Gb/s wireless link that employs a high-power resonant tunneling diode (RTD) oscillator as a transmitter (Tx). The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The reported performance is over a 50-cm link, with simple amplitude shift keying modulation utilized. The 15-Gb/s data link shows correctable bit error ...Show More
THz electronics for data centre wireless links — The TERAPOD project
2017 9th International Congress on Ultra Modern Telecommunications and Control Systems and Workshops (ICUMT)
Year: 2017 | Conference Paper |
Cited by: Papers (5)
This paper presents an overview of the terahertz (THz) resonant tunneling diode (RTD) technology that will be used as one of the approaches towards wireless data centres as envisioned on the eU H2020 TERAPOD project. We show an example 480 gm × 680 gm THz source chip at 300 GHz employing a 4 gm × 4 gm RTD device with 0.15 mW output power. We also show a basic laboratory wireless setup with this de...Show More
Resonant tunneling diode as high speed optical/electronic transmitter
Jue Wang;Abdullah Al-Khalidi;Cui Zhang;Afesomeh Ofiare;Liquan Wang;Edward Wasige;José M. L. Figueiredo
2017 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
Year: 2017 | Conference Paper |
Cited by: Papers (17)
We report both electronic and opto-electronic resonant tunneling diode (RTD) oscillators with relatively high output power. Electronic RTD oscillators working at 125/156/308 GHz with around one half milliwatt output power and optoelectronic oscillators in the 30-105 GHz range with about 1 mW output power at 44 GHz have been developed. First wireless transmission experiments with a 300 GHz oscillat...Show More
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