DSH to Extend-DSH: Chip-Level Chemical Mechanical Planarization (CMP) Model Upgrade Based on Decoupling Regression Strategy

Chemical mechanical planarization (CMP) is vital for ensuring chip fabrication uniformity at nanometer scales. The emergence of a series of phenomenological CMP process models (Stine et al., 1997; Gbondo-Tugbawa, 2002; Xie, 2007; Vasilev, 2011) suggests that the existing model upgrade approach is largely based on a change in phenomenological model assumptions, demanding deep insights into complex process mechanisms and protracted period for accuracy improvements. To tackle this issue, this paper proposes a decoupling regression strategy for model upgrades. This strategy employs a data-driven approach to enhance the coupling relationships within the model, facilitating continuous improvement of simulation accuracy based on the existing model. It is capable of achieving improvements in model accuracy even in scenarios where modelers lack insight into complex process mechanisms. We validate our method by upgrading the Density Step Height (DSH) model to the Extend-DSH model to address poor erosion predictions at the 28nm node. Comparing model predictions with silicon data reveals that the Extend-DSH model aligns better with the measured data, reducing the root mean square error from 159.31Å to 6.89Å and increasing the coefficient of determination from -0.83561 to 0.6058, showcasing the effectiveness of the proposed chip-level CMP model upgrade method grounded in the decoupling regression strategy.